GaAs solar cell with GaInP window grown by all metalorganic source MOVPE
- Sumitomo Electric Industries, Ltd., Itami, Hyogo (Japan). Basic High-Technology Labs.
Tertiarybutylarsine (tBAs) and tertiarybutylphosphine (tBP) are expected as safe alternatives to conventional hazardous hydrides, AsH{sub 3} and PH{sub 3}. The authors have applied these safer metalorganic precursors to the GaAs solar cell growth and have obtained the cell efficiency of 23.3% (under AM1.5G{center_dot}100mW/cm{sup 2}, V{sub oc} = 1.025V, J{sub sc} = 26.9mA/cm{sup 2}, FF = 0.843, the conversion efficiency for active area is 25.1%). The cell consists of the GaAs single junction and the lattice-matched GaInP window, and was grow using only metalorganic precursors. The external quantum efficiency of the GaInP window cell in the shorter wavelength range is improved considerably, compared to the previous GaAs cell with AlGaAs window grown with all metalorganic source MOVPE. This improvement is consistent with the results of the interface recombination velocity estimation for GaInP/GaAs interface and AlGaAs/GaAs interface. These results demonstrate that all metalorganic source MOVPE for the GaAs solar cell is a safe and promising alternative to the conventional MOVPE using hydride sources.
- OSTI ID:
- 191143
- Report Number(s):
- CONF-941203-; ISBN 0-7803-1459-X; TRN: IM9610%%144
- Resource Relation:
- Conference: 1. world conference on photovoltaic energy conversion, Waikoloa, HI (United States), 5-9 Dec 1994; Other Information: PBD: 1994; Related Information: Is Part Of 1994 IEEE first world conference on photovoltaic energy conversion: Conference record of the twenty-fourth IEEE photovoltaic specialists conference -- 1994. Volume 2; PB: 1268 p.
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
PERFORMANCE
GALLIUM PHOSPHIDE SOLAR CELLS
INDIUM PHOSPHIDE SOLAR CELLS
VAPOR PHASE EPITAXY
ORGANOMETALLIC COMPOUNDS
ANTIREFLECTION COATINGS
ZINC SULFIDES
MAGNESIUM FLUORIDES
ELECTRIC CONTACTS
SPECTRAL RESPONSE
QUANTUM EFFICIENCY
CURRENT DENSITY
ELECTRIC POTENTIAL
FILL FACTORS
LIFETIME
EXPERIMENTAL DATA