Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of California, Santa Barbara, CA (United States)
- Stanford Univ., CA (United States)
GaAs is often used as a multijunction subcell due to its high material quality on GaAs substrates, despite having a non-optimal bandgap. The bandgap can be beneficially reduced using many layers of thin, strain-balanced GaInAs in a superlattice or quantum well device, but achieving excellent carrier collection without increased recombination has proven challenging. Here, we develop and demonstrate high performance, optically thick GaInAs/GaAsP strain-balanced solar cells. Excellent material quality is achieved in thick superlattices by using growth conditions that limit progressive thickness and composition fluctuations. Bandgap-voltage offsets as low as 0.31 V are shown in superlattice cells using thin, highly strained GaP barriers. Optically thick superlattice cells with over 2500 nm of total GaInAs in the depletion region are developed, enabling 3.8 mA/cm 2 of extra photocurrent beyond the GaAs band edge under the AM0 space spectrum. Optimized superlattice solar cells are incorporated into two-junction devices that achieve 29.2% efficiency under the AM0 space spectrum due to their improved bandgap combination and high subcell voltages.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- AC36-08GO28308; 34358
- OSTI ID:
- 1903182
- Alternate ID(s):
- OSTI ID: 1897571
- Report Number(s):
- NREL/JA-5900-83983; MainId:84756; UUID:b6b1d767-300f-4870-9932-99861342f57c; MainAdminID:68201; TRN: US2311268
- Journal Information:
- Journal of Applied Physics, Vol. 132, Issue 18; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
14 SOLAR ENERGY
bandgap
GaAs
GaAsP
GaInAs
high-efficiency
metalorganic vapor phase epitaxy
MOVPE
photovoltaics
PV
quantum wells
tandem solar cell
solar cells
electrical properties and parameters
semiconductor structures
superlattices
transmission electron microscopy
quantum efficiency
electroluminescence
thermionic emission