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Title: Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/5.0125998· OSTI ID:1903182

GaAs is often used as a multijunction subcell due to its high material quality on GaAs substrates, despite having a non-optimal bandgap. The bandgap can be beneficially reduced using many layers of thin, strain-balanced GaInAs in a superlattice or quantum well device, but achieving excellent carrier collection without increased recombination has proven challenging. Here, we develop and demonstrate high performance, optically thick GaInAs/GaAsP strain-balanced solar cells. Excellent material quality is achieved in thick superlattices by using growth conditions that limit progressive thickness and composition fluctuations. Bandgap-voltage offsets as low as 0.31 V are shown in superlattice cells using thin, highly strained GaP barriers. Optically thick superlattice cells with over 2500 nm of total GaInAs in the depletion region are developed, enabling 3.8 mA/cm 2 of extra photocurrent beyond the GaAs band edge under the AM0 space spectrum. Optimized superlattice solar cells are incorporated into two-junction devices that achieve 29.2% efficiency under the AM0 space spectrum due to their improved bandgap combination and high subcell voltages.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
AC36-08GO28308; 34358
OSTI ID:
1903182
Alternate ID(s):
OSTI ID: 1897571
Report Number(s):
NREL/JA-5900-83983; MainId:84756; UUID:b6b1d767-300f-4870-9932-99861342f57c; MainAdminID:68201; TRN: US2311268
Journal Information:
Journal of Applied Physics, Vol. 132, Issue 18; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (46)

A quantum-well superlattice solar cell for enhanced current output and minimized drop in open-circuit voltage under sunlight concentration journal December 2012
Measuring IV Curves and Subcell Photocurrents in the Presence of Luminescent Coupling journal April 2013
Generalized Optoelectronic Model of Series-Connected Multijunction Solar Cells journal November 2015
Quantum well solar cells journal April 2002
Reciprocity relation between photovoltaic quantum efficiency and electroluminescent emission of solar cells journal August 2007
Self-Organization in Growth of Quantum Dot Superlattices journal March 1996
A new approach to high‐efficiency multi‐band‐gap solar cells journal April 1990
Semiconductor Wafer Bonding journal August 1998
The Stability of a Dislocation Threading a Strained Layer on a Substrate journal September 1987
Radiation resistance of high-efficiency InGaP/GaAs tandem solar cells journal July 1999
Quantum well carrier sweep out: relation to electroabsorption and exciton saturation journal January 1991
Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells journal January 2013
100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: toward current-matched Ge-based tandem cells: 100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells
  • Fujii, Hiromasa; Toprasertpong, Kasidit; Wang, Yunpeng
  • Progress in Photovoltaics: Research and Applications, Vol. 22, Issue 7 https://doi.org/10.1002/pip.2454
journal December 2013
GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission journal May 2004
Effect of quantum well location on single quantum well p-i-n photodiode dark currents journal November 1999
Surfactant-mediated growth of InGaAs multiple-quantum-well lasers emitting at 2.1μm by metalorganic vapor phase epitaxy journal November 2005
Critical thickness of atomically ordered III-V alloys journal October 2015
Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells journal July 2013
Self-organized growth of alloy superlattices journal February 1999
Steady-state carrier escape from single quantum wells journal June 1993
Triple-junction solar cells with 39.5% terrestrial and 34.2% space efficiency enabled by thick quantum well superlattices journal May 2022
The growth of GaInAs/InP and GaInAs/AlInAs superlattices with thin barrier layers by low pressure organometallic chemical vapor deposition journal March 1991
Improvement of front-junction GaInP by point-defect injection and annealing conference June 2021
Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method journal May 2008
Quantum Well Solar Cells: Principles, Recent Progress, and Potential journal March 2019
Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells journal March 2014
High Efficiency Inverted GaAs and GaInP/GaAs Solar Cells With Strain‐Balanced GaInAs/GaAsP Quantum Wells journal December 2020
Design and Demonstration of High-Efficiency Quantum Well Solar Cells Employing Thin Strained Superlattices journal September 2019
Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy journal July 2004
Step-Bunching Instability of Vicinal Surfaces under Stress journal October 1995
Dislocations in strained-layer epitaxy: theory, experiment, and applications journal November 1991
Advances in Bragg stack quantum well solar cells journal May 2005
Management of highly-strained heterointerface in InGaAs/GaAsP strain-balanced superlattice for photovoltaic application journal August 2012
Progress and challenges for next-generation high-efficiency multijunction solar cells journal December 2010
Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency: Wafer bonded four-junction concentrator solar cells with 44.7% efficiency journal January 2014
Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence journal September 2015
Recent results for single-junction and tandem quantum well solar cells journal January 2011
Multijunction Solar Cells With Graded Buffer Bragg Reflectors journal November 2018
Strain-Balanced Criteria for Multiple Quantum Well Structures and Its Signature in X-ray Rocking Curves journal July 2002
Metamorphic epitaxy for multijunction solar cells journal March 2016
Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration journal April 2020
Short-circuit current enhancement in Bragg stack multi-quantum-well solar cells for multi-junction space cell applications journal January 2003
Strained and strain-balanced quantum well devices for high-efficiency tandem solar cells journal April 2001
Graded buffer Bragg reflectors with high reflectivity and transparency for metamorphic optoelectronics journal May 2021
Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well pin diodes journal November 1996
Elimination of wavy layer growth phenomena in strain-compensated GaInAsP/GaInAsP multiple quantum well stacks journal December 1994