Domain wall enabled steep slope switching in MoS2 transistors towards hysteresis-free operation

Song, Jingfeng; Qi, Yubo; Xiao, Zhiyong; Wang, Kun; Li, Dawei; Kim, Seung-Hyun; Kingon, Angus I.; Rappe, Andrew M.; Hong, Xia

doi:10.1038/s41699-022-00353-1

Title: Domain wall enabled steep slope switching in MoS2 transistors towards hysteresis-free operation

Journal Article · Tue Nov 01 00:00:00 EDT 2022 · npj 2D Materials and Applications

DOI:https://doi.org/10.1038/s41699-022-00353-1· OSTI ID:1896535

; Qi, Yubo;

; Wang, Kun;

; Kim, Seung-Hyun; Kingon, Angus I.;

;

The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation mechanisms remain a central topic of debate. In this work, we report steep slope switching in MoS₂ transistors back-gated by single-layer polycrystalline PbZr_0.35Ti_0.65O₃. The devices exhibit current switching ratios up to 8 × 10⁶ within an ultra-low gate voltage window of V_g = ±0.5 V and subthreshold swing (SS) as low as 9.7 mV decade^–1 at room temperature, transcending the 60 mV decade^–1 Boltzmann limit without involving additional dielectric layers. Theoretical modeling reveals the dominant role of the metastable polar states within domain walls in enabling the NC mode, which is corroborated by the relation between SS and domain wall density. Our findings shed light on a hysteresis-free mechanism for NC operation, providing a simple yet effective material strategy for developing low-power 2D nanoelectronics.

View Journal Article

Cite

Export

Save

Research Organization:: Univ. of Pennsylvania, Philadelphia, PA (United States); Univ. of Nebraska, Lincoln, NE (United States)

Sponsoring Organization:: USDOE Office of Artificial Intelligence and Technology (AITO); USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: FG02-07ER46431; SC0016153; OIA-1538893; 1542182

OSTI ID:: 1896535

Alternate ID(s):: OSTI ID: 1867824; OSTI ID: 1962471

Journal Information:: npj 2D Materials and Applications, Journal Name: npj 2D Materials and Applications Vol. 6 Journal Issue: 1; ISSN 2397-7132

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United Kingdom

Language:: English

References (50)

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals Li, Dawei; Xiao, Zhiyong; Mu, Sai Nano Letters, Vol. 18, Issue 3 https://doi.org/10.1021/acs.nanolett.7b05473	journal	January 2018
Nonvolatile MoS ₂ field effect transistors directly gated by single crystalline epitaxial ferroelectric Lu, Zhongyuan; Serrao, Claudy; Khan, Asif Islam Applied Physics Letters, Vol. 111, Issue 2 https://doi.org/10.1063/1.4992113	journal	July 2017
Negative capacitance in a ferroelectric capacitor Khan, Asif Islam; Chatterjee, Korok; Wang, Brian Nature Materials, Vol. 14, Issue 2 https://doi.org/10.1038/nmat4148	journal	December 2014
Steep-slope hysteresis-free negative capacitance MoS2 transistors Si, Mengwei; Su, Chun-Jung; Jiang, Chunsheng Nature Nanotechnology, Vol. 13, Issue 1 https://doi.org/10.1038/s41565-017-0010-1	journal	December 2017
Phase-field simulation of polarization switching and domain evolution in ferroelectric polycrystals Choudhury, S.; Li, Y.; Krilliii, C. Acta Materialia, Vol. 53, Issue 20 https://doi.org/10.1016/j.actamat.2005.07.040	journal	December 2005
Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching Qi, Yubo; Rappe, Andrew M. Physical Review Applied, Vol. 4, Issue 4 https://doi.org/10.1103/PhysRevApplied.4.044014	journal	October 2015
How Good Can Monolayer MoS ₂ Transistors Be? Yoon, Youngki; Ganapathi, Kartik; Salahuddin, Sayeef Nano Letters, Vol. 11, Issue 9 https://doi.org/10.1021/nl2018178	journal	September 2011
Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer ${MoS}_{2}$ Xiao, Zhiyong; Song, Jingfeng; Ferry, David K. Physical Review Letters, Vol. 118, Issue 23 https://doi.org/10.1103/PhysRevLett.118.236801	journal	June 2017
Conduction at domain walls in oxide multiferroics Seidel, J.; Martin, L. W.; He, Q. Nature Materials, Vol. 8, Issue 3 https://doi.org/10.1038/nmat2373	journal	January 2009
Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating Wang, Xudong; Chen, Yan; Wu, Guangjian npj 2D Materials and Applications, Vol. 1, Issue 1 https://doi.org/10.1038/s41699-017-0040-4	journal	November 2017
Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs Daus, Alwin; Vogt, Christian; Munzenrieder, Niko IEEE Transactions on Electron Devices, Vol. 64, Issue 7 https://doi.org/10.1109/TED.2017.2703914	journal	July 2017
The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs Cheng, B.; Cao, M.; Rao, R. IEEE Transactions on Electron Devices, Vol. 46, Issue 7 https://doi.org/10.1109/16.772508	journal	July 1999
Mobility engineering and a metal–insulator transition in monolayer MoS2 Radisavljevic, Branimir; Kis, Andras Nature Materials, Vol. 12, Issue 9 https://doi.org/10.1038/nmat3687	journal	June 2013
Conduction at Domain Walls in Insulating Pb(Zr0.2Ti0.8)O3 Thin Films Guyonnet, Jill; Gaponenko, Iaroslav; Gariglio, Stefano Advanced Materials, Vol. 23, Issue 45 https://doi.org/10.1002/adma.201102254	journal	September 2011
Tuning Negative Capacitance in PbZr0.2Ti0.8O3/SrTiO3 Heterostructures via Layer Thickness Ratio Hao, Yifei; Li, Tianlin; Yun, Yu Physical Review Applied, Vol. 16, Issue 3 https://doi.org/10.1103/PhysRevApplied.16.034004	journal	September 2021
Néel-like domain walls in ferroelectric Pb(Zr,Ti)O3 single crystals Wei, Xian-Kui; Jia, Chun-Lin; Sluka, Tomas Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms12385	journal	August 2016
Negative capacitance 2D MoS2 transistors with sub-60mV/dec subthreshold swing over 6 orders, 250 μA/μm current density, and nearly-hysteresis-free Yu, Zhihao; Wang, Hanchen; Li, Weisheng 2017 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2017.8268448	conference	December 2017
Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance Si, M.; Jiang, C.; Su, C. -J. 2017 IEEE International Electron Devices Meeting (IEDM) https://doi.org/10.1109/IEDM.2017.8268447	conference	December 2017
Breakdown of High-Performance Monolayer MoS ₂ Transistors Lembke, Dominik; Kis, Andras ACS Nano, Vol. 6, Issue 11 https://doi.org/10.1021/nn303772b	journal	October 2012
Negative capacitance in multidomain ferroelectric superlattices Zubko, Pavlo; Wojdeł, Jacek C.; Hadjimichael, Marios Nature, Vol. 534, Issue 7608 https://doi.org/10.1038/nature17659	journal	June 2016
MoS ₂ Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit Liu, Xingqiang; Liang, Renrong; Gao, Guoyun Advanced Materials, Vol. 30, Issue 28 https://doi.org/10.1002/adma.201800932	journal	May 2018
Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS ₂ and ultra high-k gate dielectric PZT Zhou, Changjian; Wang, Xinsheng; Raju, Salahuddin Nanoscale, Vol. 7, Issue 19 https://doi.org/10.1039/C5NR01072A	journal	January 2015
Modeling of Negative Capacitance in Ferroelectric Thin Films Park, Hyeon Woo; Roh, Jangho; Lee, Yong Bin Advanced Materials https://doi.org/10.1002/adma.201805266	journal	June 2019
Polar coupling enabled nonlinear optical filtering at MoS2/ferroelectric heterointerfaces Li, Dawei; Huang, Xi; Xiao, Zhiyong Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-15191-2	journal	March 2020
Grain size and domain size relations in bulk ceramic ferroelectric materials Cao, Wenwu; Randall, Clive A. Journal of Physics and Chemistry of Solids, Vol. 57, Issue 10 https://doi.org/10.1016/0022-3697(96)00019-4	journal	October 1996
Subthreshold swing improvement in MoS ₂ transistors by the negative-capacitance effect in a ferroelectric Al-doped-HfO ₂ /HfO ₂ gate dielectric stack Nourbakhsh, Amirhasan; Zubair, Ahmad; Joglekar, Sameer Nanoscale, Vol. 9, Issue 18 https://doi.org/10.1039/C7NR00088J	journal	January 2017
Direct Observation of Continuous Electric Dipole Rotation in Flux-Closure Domains in Ferroelectric Pb(Zr,Ti)O3 Jia, C. -L.; Urban, K. W.; Alexe, M. Science, Vol. 331, Issue 6023 https://doi.org/10.1126/science.1200605	journal	March 2011
Sub- kT/q Switching in Strong Inversion in PbZr _0.52 Ti _0.48 O ₃ Gated Negative Capacitance FETs Dasgupta, S.; Rajashekhar, A.; Majumdar, K. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol. 1 https://doi.org/10.1109/JXCDC.2015.2448414	journal	December 2015
Revisiting the Theory of Ferroelectric Negative Capacitance Majumdar, Kausik; Datta, Suman; Rao, Satyavolu Papa IEEE Transactions on Electron Devices, Vol. 63, Issue 5 https://doi.org/10.1109/TED.2016.2544813	journal	May 2016
Spatially resolved steady-state negative capacitance Yadav, Ajay K.; Nguyen, Kayla X.; Hong, Zijian Nature, Vol. 565, Issue 7740 https://doi.org/10.1038/s41586-018-0855-y	journal	January 2019
Resonant domain-wall-enhanced tunable microwave ferroelectrics Gu, Zongquan; Pandya, Shishir; Samanta, Atanu Nature, Vol. 560, Issue 7720 https://doi.org/10.1038/s41586-018-0434-2	journal	August 2018
Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices Salahuddin, Sayeef; Datta, Supriyo Nano Letters, Vol. 8, Issue 2 https://doi.org/10.1021/nl071804g	journal	February 2008
Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations Hong, Xia Journal of Physics: Condensed Matter, Vol. 28, Issue 10 https://doi.org/10.1088/0953-8984/28/10/103003	journal	February 2016
Sub-60 mV/decade switching in 2D negative capacitance field-effect transistors with integrated ferroelectric polymer McGuire, Felicia A.; Cheng, Zhihui; Price, Katherine Applied Physics Letters, Vol. 109, Issue 9 https://doi.org/10.1063/1.4961108	journal	August 2016
Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3 Hong, X.; Hoffman, J.; Posadas, A. Applied Physics Letters, Vol. 97, Issue 3 https://doi.org/10.1063/1.3467450	journal	July 2010
Low-energy structural dynamics of ferroelectric domain walls in hexagonal rare-earth manganites Wu, Xiaoyu; Petralanda, Urko; Zheng, Lu Science Advances, Vol. 3, Issue 5 https://doi.org/10.1126/sciadv.1602371	journal	May 2017
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
A critical review of recent progress on negative capacitance field-effect transistors Alam, Muhammad A.; Si, Mengwei; Ye, Peide D. Applied Physics Letters, Vol. 114, Issue 9 https://doi.org/10.1063/1.5092684	journal	March 2019
Phonon-limited mobility in $n$ -type single-layer MoS $_{2}$ from first principles Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W. Physical Review B, Vol. 85, Issue 11 https://doi.org/10.1103/PhysRevB.85.115317	journal	March 2012
Thermodynamic theory of epitaxial ferroelectric thin films with dense domain structures Koukhar, V. G.; Pertsev, N. A.; Waser, R. Physical Review B, Vol. 64, Issue 21 https://doi.org/10.1103/PhysRevB.64.214103	journal	November 2001
Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS ₂ Transistors McGuire, Felicia A.; Lin, Yuh-Chen; Price, Katherine Nano Letters, Vol. 17, Issue 8 https://doi.org/10.1021/acs.nanolett.7b01584	journal	July 2017
Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching Jo, Jaesung; Shin, Changhwan IEEE Electron Device Letters, Vol. 37, Issue 3 https://doi.org/10.1109/LED.2016.2523681	journal	March 2016
The chips are down for Moore’s law Waldrop, M. Mitchell Nature, Vol. 530, Issue 7589 https://doi.org/10.1038/530144a	journal	February 2016
Static negative capacitance of a ferroelectric nano-domain nucleus Sluka, Tomas; Mokry, Pavel; Setter, Nava Applied Physics Letters, Vol. 111, Issue 15 https://doi.org/10.1063/1.4989391	journal	October 2017
Domain wall motion and its contribution to the dielectric and piezoelectric properties of lead zirconate titanate films Xu, F.; Trolier-McKinstry, S.; Ren, W. Journal of Applied Physics, Vol. 89, Issue 2 https://doi.org/10.1063/1.1325005	journal	January 2001
A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors Jiang, Chunsheng; Si, Mengwei; Liang, Renrong IEEE Journal of the Electron Devices Society, Vol. 6 https://doi.org/10.1109/JEDS.2017.2787137	journal	January 2018
Microwave a.c. conductivity of domain walls in ferroelectric thin films Tselev, Alexander; Yu, Pu; Cao, Ye Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms11630	journal	May 2016
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Optoelectrical Molybdenum Disulfide (MoS ₂ )—Ferroelectric Memories Lipatov, Alexey; Sharma, Pankaj; Gruverman, Alexei ACS Nano, Vol. 9, Issue 8 https://doi.org/10.1021/acsnano.5b02078	journal	July 2015
MoS ₂ Nanosheets for Top-Gate Nonvolatile Memory Transistor Channel Lee, Hee Sung; Min, Sung-Wook; Park, Min Kyu Small, Vol. 8, Issue 20 https://doi.org/10.1002/smll.201200752	journal	July 2012

Similar Records

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Journal Article · Wed Mar 13 00:00:00 EDT 2019 · Nanotechnology · OSTI ID:1896535

Huang, Xuanqi; Fang, Runchen; Yang, Chen; +10 more

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

Journal Article · Mon Nov 11 00:00:00 EST 2013 · Applied Physics Letters · OSTI ID:1896535

Chiou, Uio-Pu; Pan, Fu-Ming; Shieh, Jia-Min; +3 more

Ultra‐Steep Slope Impact Ionization Transistors Based on Graphene/InAs Heterostructures

Journal Article · Tue Sep 29 00:00:00 EDT 2020 · Small Structures · OSTI ID:1896535

Liu, Yuan; Guo, Jian; Song, Wenjing; +4 more

Related Subjects

36 MATERIALS SCIENCE
transistors
nanoscale physics
77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY

Title: Domain wall enabled steep slope switching in MoS2 transistors towards hysteresis-free operation

Citation Formats

References (50)

Similar Records

Related Subjects