The Third Dimension of Ferroelectric Domain Walls

Roede, Erik D.; Shapovalov, Konstantin; Moran, Thomas J.; Mosberg, Aleksander B.; Yan, Zewu; Bourret, Edith; Cano, Andres; Huey, Bryan D.; van Helvoort, Antonius T. J.; Meier, Dennis

doi:10.1002/adma.202202614

Title: The Third Dimension of Ferroelectric Domain Walls

Journal Article · Fri Aug 05 00:00:00 EDT 2022 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202202614· OSTI ID:1880145

Roede, Erik D. ^[1]; Shapovalov, Konstantin ^[2]; Moran, Thomas J. ^[3]; Mosberg, Aleksander B. ^[4]; Yan, Zewu ^[5]; Bourret, Edith ^[6]; Cano, Andres ^[7]; Huey, Bryan D. ^[3]; van Helvoort, Antonius T. J. ^[8];

^[1]

Department of Materials Science and Engineering NTNU Norwegian University of Science and Technology Trondheim 7491 Norway
Institut de Ciència de Materials de Barcelona (ICMAB‐CSIC) Campus UAB Bellaterra 08193 Spain
Department of Materials Science and Engineering University of Connecticut Storrs CT 06269 USA
Department of Physics NTNU Norwegian University of Science and Technology Trondheim 7491 Norway, SuperSTEM STFC Daresbury Laboratories Keckwick Lane Warrington WA4 4AD UK
Department of Physics ETH Zurich Zürich 8093 Switzerland, Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
Universite Grenoble Alpes, CNRS, Grenoble INP Institut Néel Grenoble France
Department of Physics NTNU Norwegian University of Science and Technology Trondheim 7491 Norway

Abstract Ferroelectric domain walls are quasi‐2D systems that show great promise for the development of nonvolatile memory, memristor technology, and electronic components with ultrasmall feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being embedded in a 3D material, however, the domain walls are not perfectly flat and can form networks, which leads to complex physical structures. In this work, the importance of the nanoscale structure for the emergent transport properties is demonstrated, studying electronic conduction in the 3D network of neutral and charged domain walls in ErMnO ₃ . By combining tomographic microscopy techniques and finite element modeling, the contribution of domain walls within the bulk is clarified and the significance of curvature effects for the local conduction is shown down to the nanoscale. The findings provide insights into the propagation of electrical currents in domain wall networks, reveal additional degrees of freedom for their control, and provide quantitative guidelines for the design of domain‐wall‐based technology.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; European Research Council (ERC); National Science Foundation (NSF); Ministry of Economic Affairs and Digital Transformation of Spain (MINECO)

Grant/Contract Number:: AC02-05CH11231; 863691; 724529; DMR:MRI:1726862; MAT2016-77100-C2-2-P; SEV-2015-0496

OSTI ID:: 1880145

Alternate ID(s):: OSTI ID: 1886071; OSTI ID: 1906709

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Vol. 34 Journal Issue: 36; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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36 MATERIALS SCIENCE
domain walls
ErMnO3
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quasi-2D systems
tomography

Title: The Third Dimension of Ferroelectric Domain Walls

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