Theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- Univ. of Illinois at Urbana-Champaign, IL (United States); Univ. of Science and Technology of China, Hefei (China)
- Lehigh Univ., Bethlehem, PA (United States)
- Argonne National Lab. (ANL), Argonne, IL (United States)
We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as-grown array diodes, the rectification ratio, defined by the maximum-to-minimum-current-ratio, is low due to the presence of metallic-single-walled nanotube (SWNT) shunts. These tubes can be eliminated in a single voltage sweep resulting in a high rectification array device. Further analysis also shows that the channel resistance, and not the intrinsic nanotube diode properties, limits the rectification in devices with channel length up to 10 μm.
- Research Organization:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
- Grant/Contract Number:
- FG02-07ER46471; FG02-07ER46453
- OSTI ID:
- 1876433
- Journal Information:
- Nano Research, Vol. 3, Issue 6; ISSN 1998-0124
- Publisher:
- SpringerCopyright Statement
- Country of Publication:
- United States
- Language:
- English
One-dimensional van der Waals heterojunction diode | text | January 2020 |
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