Room-temperature large magnetoelectricity in a transition metal doped ferroelectric perovskite

Kumari, Shalini; Pradhan, Dhiren K.; Liu, Shi; Rahaman, M. M.; Zhou, Peng; Roccapriore, Kevin M.; Pradhan, Dillip K.; Srinivasan, Gopalan; Li, Qi; Katiyar, Ram S.; Rack, Philip D.; Scott, J. F.; Kumar, Ashok

doi:10.1103/physrevb.104.174415

Title: Room-temperature large magnetoelectricity in a transition metal doped ferroelectric perovskite

Journal Article · Mon Nov 15 00:00:00 EST 2021 · Physical Review. B

DOI:https://doi.org/10.1103/physrevb.104.174415· OSTI ID:1867222

^[1];

^[2]; Liu, Shi ^[3]; Rahaman, M. M. ^[4]; Zhou, Peng ^[5]; Roccapriore, Kevin M. ^[6];

^[7]; Srinivasan, Gopalan ^[5];

^[1];

^[8];

^[2]; Scott, J. F. ^[9]; Kumar, Ashok ^[10]

Pennsylvania State Univ., University Park, PA (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Westlake Univ., Hangzhou (China)
Carnegie Inst. of Science, Washington, DC (United States); Univ. of Rajshahi (Bangladesh)
Oakland Univ., Rochester, MI (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
National Institute of Technology, Rourkela (India)
Univ. of Puerto Rico, San Juan, PR (United States)
Univ. of St. Andrews, Scotland (United Kingdom)
CSIR- National Physical Laboratory, New Delhi (India)

There is increasing interest in novel magnetoelectric (ME) materials that exhibit robust ME coupling at room-temperature (RT) for advanced memory, energy, spintronics, and other multifunctional device applications, by making use of the ability to control polarization with a magnetic field and/or magnetization via an electric field. Obtaining ME materials with strong ME coupling, understanding the origin, and manipulating its processing along with composition to realize large ME coefficients at RT constitute an important step in multiferroic research. To address this, we have investigated the multiferroic and ME properties of Ni-doped Pb(Zr_0.20Ti_0.80)O₃ (PZT). We find that the ferroelectric (T_C ~ 700 K) and weak ferromagnetic (~ 602 K) phase transitions of Ni-doped PZT are well above RT, leading to a strong ME coupling coefficient (α_E,31) of 11.7 mVcm^-1Oe^-1 (H_ac = 1 Oe and f = 1 kHz). While X-ray diffraction suggests a single-phase material, high resolution transmission electron microscopy reveals regions with and without Ni present; thus magnetoelectric coupling between two phases is possible. First-principle calculations suggest the (Ni_Pb)^× defect is likely to be responsible for the experimental observed magnetism and ME coupling in Ni-doped PZT. Furthermore, we demonstrate that Ni-doped PZT exhibits low loss tangent, low leakage current, large saturation polarization and weak ferromagnetism. Ultimately, our work demonstrates that Ni-doped PZT is a cost-effective RT multiferroic with strong ME coupling.

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Research Organization:: Louisiana State Univ., Baton Rouge, LA (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); Engineering and Physical Sciences Research Council (EPSRC); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0002136; FG02-08ER46531; AC05-00OR22725

OSTI ID:: 1867222

Alternate ID(s):: OSTI ID: 1890278

Journal Information:: Physical Review. B, Vol. 104, Issue 17; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
dielectric properties
ferroelectricity
magnetic coupling
magnetic order
magnetoelectric effect
ferroelectrics
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perovskites
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Title: Room-temperature large magnetoelectricity in a transition metal doped ferroelectric perovskite

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