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Title: Effect of buffer termination on intermixing and conductivity in LaTiO3/SrTiO3 heterostructures integrated on Si(100)

Journal Article · · Journal of Vacuum Science and Technology A
DOI:https://doi.org/10.1116/6.0001464· OSTI ID:1846807
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  1. North Carolina State Univ., Raleigh, NC (United States)
  2. Univ. of Texas-Arlington, TX (United States)
  3. Argonne National Lab. (ANL), Lemont, IL (United States)

Here, the control of chemical exchange across heterointerfaces formed between ultrathin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. By determining the layer-resolved structural profile across the interface between the Mott insulator, LaTiO3 (LTO) grown epitaxially on SrTiO3 (STO)-buffered silicon by molecular beam epitaxy, we find that interfacial cationic exchange depends on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron x-ray crystal truncation rods and reciprocal space mapping, an enhanced conductivity in STO/LTO/SrO-terminated STO buffers compared to heterostructures with TiO2-terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La1-xSrxTiO3. La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1846807
Alternate ID(s):
OSTI ID: 1833765
Journal Information:
Journal of Vacuum Science and Technology A, Vol. 40, Issue 1; ISSN 0734-2101
Publisher:
American Vacuum Society / AIPCopyright Statement
Country of Publication:
United States
Language:
English

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