Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Yan, Xiaodong; Qian, Justin H.; Sangwan, Vinod K.; Hersam, Mark C.

doi:10.1002/adma.202108025

Title: Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Journal Article · Sat Feb 19 00:00:00 EST 2022 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202108025· OSTI ID:1846496

^[1]; Qian, Justin H. ^[1];

^[1];

^[2]

Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA
Department of Materials Science and Engineering Northwestern University Evanston IL 60208 USA, Department of Electrical and Computer Engineering Northwestern University Evanston IL 60208 USA, Department of Chemistry Northwestern University Evanston IL 60208 USA

Abstract Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy‐efficient information processing of the brain. While non‐volatile memory (NVM) based on resistive switches, phase‐change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi‐terminal device concepts are required for more sophisticated bio‐realistic functions. Of particular interest are memtransistors based on low‐dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi‐terminal NVM devices including dual‐gated floating‐gate memories, dual‐gated ferroelectric transistors, and dual‐gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase‐changes properties of nanomaterials. Finally, strategies for achieving wafer‐scale integration of memtransistors and multi‐terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐NA0003525

OSTI ID:: 1846496

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Vol. 34 Journal Issue: 48; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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