Heteroepitaxy of GaP on Si(100)
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Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
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Electron channelling contrast imaging of interfacial defects in strained silicon-germanium layers on silicon
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Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an in situ AsH 3 surface preparation
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August 2015 |
Dislocation morphology in graded heterojunctions: GaAs1?xPx
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March 1969 |
Low-density dislocation arrays at heteroepitaxial Ge/GaAs-interfaces investigated by high voltage electron microscopy
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Observation of strain distributions in partially relaxed In0.2Ga0.8As on GaAs using electron channelling contrast imaging
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June 1996 |
Rapid characterization of extended defects in III–V/Si by electron channeling contrast imaging
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2014 IEEE 40th Photovoltaic Specialists Conference (PVSC), 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
https://doi.org/10.1109/PVSC.2014.6925512
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June 2014 |
Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition
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April 2013 |
High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition
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October 2011 |
Reduced Dislocation Introduction in III–V/Si Heterostructures with Glide-Enhancing Compressively Strained Superlattices
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September 2020 |
Electron channelling contrast imaging of dislocations in a conventional SEM
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November 2016 |
In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si(100)
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Issue 4
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July 2010 |
Dislocation density measurement by electron channeling contrast imaging in a scanning electron microscope
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March 2012 |
Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates
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May 2004 |
Transmission electron microscopy study of stacking faults and the associated partial dislocations in pseudomorphic epilayers of ZnSe/GaAs(001)
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The heteroepitaxial growth of GaP films on Si substrates
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January 1977 |
Efficiency calculations of thin‐film GaAs solar cells on Si substrates
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November 1985 |
Polar‐on‐nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si(211) surfaces
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July 1982 |
Step structure and surface morphology of hydrogen-terminated silicon: (001) to (114)
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November 2003 |
Misfit dislocation and threading dislocation distributions in InGaAs and GeSi/Si partially relaxed heterostructures
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April 2002 |
Pyramidal Structure Formation at the Interface between III/V Semiconductors and Silicon
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May 2016 |
Electron diffraction based techniques in scanning electron microscopy of bulk materials
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August 1997 |
Limits of strain relaxation in InGaAs∕GaAs probed in real time by in situ wafer curvature measurement
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October 2005 |
Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions
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April 2008 |
Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy
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March 2010 |
Surface Chemistry of tert- Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin-Film Growth
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August 2016 |
Optical investigations of surface processes in GaP heteroepitaxy on silicon under pulsed chemical beam epitaxy conditions
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July 1996 |
Interface of GaP/Si(001) and antiphase boundary facet-type determination
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January 2019 |
Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si
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April 2018 |
Evolution of microstructure and dislocation dynamics in In[sub x]Ga[sub 1−x]P graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 17, Issue 4
https://doi.org/10.1116/1.590779
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January 1999 |
Structural characteristics of gallium metal deposited on Si (001) by MOCVD
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November 2014 |
Elimination of ‘‘pair’’ defects from GaAs layers grown by molecular beam epitaxy
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Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
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MOVPE Grown Gallium Phosphide–Silicon Heterojunction Solar Cells
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March 2017 |
Dislocation dynamics in relaxed graded composition semiconductors
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Quantitative Characterization of Misfit Dislocations at GaP/Si Heteroepitaxial Interfaces via Electron Channeling Contrast Imaging and Semi-Automated Image Analysis
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August 2019 |
Initiation strategies for simultaneous control of antiphase domains and stacking faults in GaAs solar cells on Ge
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 34, Issue 4
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Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging
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Transmission Electron Microscopy
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A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface misfit dislocation in its path
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Binding and diffusion of a Si adatom on the Si(100) surface
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C ONTROLLED M OLECULAR A DSORPTION ON S ILICON : Laying a Foundation for Molecular Devices
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MOCVD growth and characterization of GaP on Si
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September 1986 |
Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III–V/Si Heterostructures
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March 2015 |
Measurement of the activation barrier to nucleation of dislocations in thin films
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July 1993 |
Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy
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June 2009 |
Molecular Layer Epitaxy
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Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(100) substrates
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Control of asymmetric strain relaxation in InGaAs grown by molecular-beam epitaxy
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May 2010 |
Universal description of III-V/Si epitaxial growth processes
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June 2018 |
Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces
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October 2016 |
Multiplication of misfit dislocations in epitaxial layers
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GaP-nucleation on exact Si (001) substrates for III/V device integration
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January 2011 |
GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
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April 2012 |
Advanced Electron Microscopy for III/V on Silicon Integration
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April 2019 |
Relaxed GaP on Si with low threading dislocation density
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January 2020 |
Dielectric Anisotropy of the Interface from First-Principles Theory
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June 2017 |
Stacking fault pyramids, island growth and misfit dislocations in InxGa1−xAs/InP heterostructures grown by vapour phase epitaxy
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July 1991 |
Time-Resolved In Situ Spectroscopy During Formation of the GaP/Si(100) Heterointerface
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January 2015 |
Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate
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February 2002 |
Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics
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November 2017 |