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Title: Van der Waals Nanowires with Continuously Variable Interlayer Twist and Twist Homojunctions

Journal Article · · Advanced Functional Materials
ORCiD logo [1];  [2];  [3]
  1. Department of Electrical &, Computer Engineering University of Nebraska‐Lincoln Lincoln NE 68588 USA
  2. Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA
  3. Department of Mechanical &, Materials Engineering University of Nebraska‐Lincoln Lincoln NE 68588 USA

Abstract Moiré patterns at van der Waals interfaces between twisted 2D crystals give rise to distinct optoelectronic excitations, as well as, narrowly dispersive bands responsible for correlated electron phenomena. Contrasting with the conventional, mechanically stacked planar twist moirés, recent work shows twisted van der Waals interfaces spontaneously formed in nanowires of layered crystals, where Eshelby twist due to axial screw dislocations stabilizes a chiral structure with small interlayer rotation. Here, the realization of tunable twist in germanium(II) sulfide (GeS) van der Waals nanowires is reported. Tapered nanowires host continuously variable interlayer twist. Homojunctions between dislocated (chiral) and defect‐free (achiral) segments are obtained by triggering the emission of axial dislocations during growth. Measurements across such junctions, implemented here using local absorption and luminescence spectroscopy, provide a convenient tool for detecting twist effects. The results identify a versatile system for 3D twistronics, probing moiré physics, and for realizing moiré architectures without equivalent in planar systems.

Sponsoring Organization:
USDOE
OSTI ID:
1804227
Journal Information:
Advanced Functional Materials, Journal Name: Advanced Functional Materials Vol. 31 Journal Issue: 9; ISSN 1616-301X
Publisher:
Wiley Blackwell (John Wiley & Sons)Copyright Statement
Country of Publication:
Germany
Language:
English

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