Study of the perpendicular magnetic anisotropy, spin–orbit torque, and Dzyaloshinskii–Moriya interaction in the heavy metal/CoFeB bilayers with Ir22 Mn78 insertion
[1];
[2];
[3];
[4];
[7];
- Beijing Normal University, Beijing, China (Asia). Institute of Advanced Materials; University of California, Los Angeles, California (United States). Department of Electrical and Computer Engineering
- University of California, Los Angeles, California (United States). Department of Electrical and Computer Engineering
- Chinese Academy of Sciences, China (Asia). Beijing National Laboratory for Condensed Matter Physics, Institute of Physics; University of Chinese Academy of Sciences, Beijing, China (Asia). enter of Materials Science and Optoelectronics Engineering; Songshan Lake Materials Laboratory, Dongguan, Guangdong, China (Asia).
- University of California, Santa Barbara, California (United States). Department of Electrical and Computer Engineering
- University of California, Santa Barbara, California (United States). Department of Electrical and Computer Engineering; The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China (Asia). Department of Electronic and Computer Engineering
- Beijing Normal University, Beijing, China (Asia). Institute of Advanced Materials
- Institute of Physics, Chinese Academy of Sciences, Beijing, China (Asia). Beijing National Laboratory for Condensed Matter Physics
- University of Texas, Austin, Texas (United States). Department of Physics, Center for Complex Quantum Systems
The perpendicular magnetic anisotropy (PMA), current-induced spin–orbit torques (SOTs), and Dzyaloshinskii–Moriya interaction (DMI) in the as-grown W or Ta/Ir22Mn78(IrMn)/CoFeB/MgO stacks with varying IrMn layer thicknesses were investigated. The in-plane magnetized W/CoFeB/MgO sample becomes perpendicularly magnetized after inserting the IrMn layer without the requirement of the annealing process. The effective magnetization fields 4πMeff show a nonmonotonic dependence on the IrMn layer thickness, which reaches the maximum in magnitude at a thickness of tIrMn = 0.75 nm. The SOT effective fields corresponding to damping-like and field-like torques decrease with the insertion layer thickness. Moreover, the variation of the IrMn layer thickness leads to the change of the DMI in magnitude and sign change from positive (favoring right-handed chirality) to negative (favoring left-handed chirality). The realization of changing the PMA, SOTs, and DMI by inserting the IrMn layer provides more flexibility in the design of spintronic devices.
- Research Organization:
- Univ. of California, Riverside, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- SC0012670
- OSTI ID:
- 1802451
- Journal Information:
- Applied Physics Letters, Vol. 116, Issue 24; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Strong Damping‐Like Spin‐Orbit Torque and Tunable Dzyaloshinskii–Moriya Interaction Generated by Low‐Resistivity Pd 1− x Pt x Alloys
Interfacial control of Dzyaloshinskii-Moriya interaction in heavy metal/ferromagnetic metal thin film heterostructures