Quantum Hall Effect Measurement of Spin–Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe2 Heterostructures

Wang, Dongying; Che, Shi; Cao, Guixin; Lyu, Rui; Watanabe, Kenji; Taniguchi, Takashi; Lau, Chun Ning; Bockrath, Marc

doi:10.1021/acs.nanolett.9b02445

Title: Quantum Hall Effect Measurement of Spin–Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe₂ Heterostructures

Journal Article · Tue Sep 17 00:00:00 EDT 2019 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.9b02445· OSTI ID:1802136

^[1]; Che, Shi ^[1]; Cao, Guixin ^[1]; Lyu, Rui ^[2]; Watanabe, Kenji ^[3]; Taniguchi, Takashi ^[3];

^[1];

^[1]

The Ohio State Univ., Columbus, OH (United States)
Univ. of California, Riverside, CA (United States)
National Institute for Materials Science (NIMS), Tsukuba (Japan)

Here, we study proximity-induced spin–orbit coupling (SOC) in bilayer graphene/few-layer WSe₂ heterostructure devices. Contact mode atomic force microscopy (AFM) cleaning yields ultraclean interfaces and high-mobility devices. In a perpendicular magnetic field, we measure the quantum Hall effect to determine the Landau level structure in the presence of out-of-plane Ising and in-plane Rashba SOC. A distinct Landau level crossing pattern emerges when tuning the charge density and displacement field independently with dual gates, originating from a layer-selective SOC proximity effect. Analyzing the Landau level crossings and measured inter-Landau level energy gaps yields the proximity-induced SOC energy scale. The Ising SOC is ~2.2 meV, 100 times higher than the intrinsic SOC in graphene, whereas its sign is consistent with theories predicting a dependence of SOC on interlayer twist angle. The Rashba SOC is ~15 meV. Finally, we infer the magnetic field dependence of the inter-Landau level Coulomb interactions. These ultraclean bilayer graphene/WSe₂ heterostructures provide a high mobility system with the potential to realize novel topological electronic states and manipulate spins in nanostructures.

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Research Organization:: Univ. of California, Riverside, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0010597

OSTI ID:: 1802136

Journal Information:: Nano Letters, Vol. 19, Issue 10; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Quantum Hall Effect Measurement of Spin–Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe2 Heterostructures

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