Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
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May 1979 |
Achieving atomistic control in materials processing by plasma–surface interactions
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June 2017 |
Surprising importance of photo-assisted etching of silicon in chlorine-containing plasmas
- Shin, Hyungjoo; Zhu, Weiye; Donnelly, Vincent M.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 2
https://doi.org/10.1116/1.3681285
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March 2012 |
Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas
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May 2014 |
Insights into the mechanism of in-plasma photo-assisted etching using optical emission spectroscopy
- Sridhar, Shyam; Liu, Lei; Hirsch, Emilia W.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 6
https://doi.org/10.1116/1.4964641
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November 2016 |
Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl2Atmosphere
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January 1985 |
Photochemical etching of silicon: The influence of photogenerated charge carriers
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May 1989 |
Reaction of silicon with chlorine and ultraviolet laser induced chemical etching mechanisms
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September 1989 |
Surface Reaction Enhancement by UV irradiation during Si Etching Process with Chlorine Atom Beam
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January 2007 |
Vacuum Ultraviolet and Ultraviolet Radiation-Induced Effect of Hydrogenated Silicon Nitride Etching: Surface Reaction Enhancement and Damage Generation
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January 2012 |
Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes
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May 2013 |
Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193nm photoresist roughening and degradation
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April 2008 |
Plasma impact on 193 nm photoresist linewidth roughness: Role of plasma vacuum ultraviolet light
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March 2009 |
Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation
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July 2017 |
Controlling VUV photon fluxes in low-pressure inductively coupled plasmas
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May 2015 |
Controlling VUV photon fluxes in pulsed inductively coupled Ar/Cl 2 plasmas and potential applications in plasma etching
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January 2017 |
Sub-10 nm nanopantography
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November 2015 |
Transfer of nanopantography-defined patterns using highly selective plasma etching
- Tian, Siyuan; Donnelly, Vincent M.; Economou, Demetre J.
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 33, Issue 3
https://doi.org/10.1116/1.4918716
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May 2015 |
Realization of atomic layer etching of silicon
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November 1996 |
Infrared‐laser interferometric thermometry: A nonintrusive technique for measuring semiconductor wafer temperatures
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January 1990 |
Temperature Dependence of InP and GaAs Etching in a Chlorine Plasma
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November 1982 |
Interferometric thermometry measurements of silicon wafer temperatures during plasma processing
- Donnelly, V. M.; Ibbotson, D. E.; Chang, C. ‐P.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, Issue 4
https://doi.org/10.1116/1.578202
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July 1992 |
Cl2 plasma etching of Si(100): Nature of the chlorinated surface layer studied by angle-resolved x-ray photoelectron spectroscopy
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May 1997 |
Cl2 plasma etching of Si(100): Damaged surface layer studied by in situ spectroscopic ellipsometry
- Layadi, N.; Donnelly, V. M.; Lee, J. T. C.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 3
https://doi.org/10.1116/1.580691
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May 1997 |
Control of ion energy distributions using a pulsed plasma with synchronous bias on a boundary electrode
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August 2011 |
Predictions of ion energy distributions and radical fluxes in radio frequency biased inductively coupled plasma etching reactors
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March 1996 |
Kinetic study of low energy argon ion-enhanced plasma etching of polysilicon with atomic/molecular chlorine
- Chang, Jane P.; Arnold, John C.; Zau, Gavin C. H.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 4
https://doi.org/10.1116/1.580652
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July 1997 |
Kinetic study of low energy ion-enhanced polysilicon etching using Cl, Cl 2 , and Cl + beam scattering
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May 1997 |
Silicon etching yields in F2, Cl2, Br2, and HBr high density plasmas
- Vitale, Steven A.; Chae, Heeyeop; Sawin, Herbert H.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 5
https://doi.org/10.1116/1.1378077
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September 2001 |
Low‐energy Ar ion‐induced and chlorine ion etching of silicon
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January 1996 |
Effect of Cl 2 additions to an argon glow discharge
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February 1994 |
Ion-assisted etching and profile development of silicon in molecular chlorine
- Levinson, Joshua A.; Shaqfeh, Eric S. G.; Balooch, Mehdi
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 4
https://doi.org/10.1116/1.580658
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July 1997 |
Measurements of secondary electron emission and plasma density enhancement for plasma exposed surfaces using an optically isolated Faraday cup
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March 2002 |
Langmuir probe studies of a transformer-coupled plasma, aluminum etcher
- Malyshev, M. V.; Donnelly, V. M.; Kornblit, A.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 2
https://doi.org/10.1116/1.581609
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March 1999 |
Feature evolution during plasma etching. II. Polycrystalline silicon etching
- Lane, J. M.; Klemens, F. P.; Bogart, K. H. A.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, Issue 1
https://doi.org/10.1116/1.582136
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January 2000 |
In situ pulsed laser‐induced thermal desorption studies of the silicon chloride surface layer during silicon etching in high density plasmas of Cl2 and Cl2/O2 mixtures
- Cheng, C. C.; Guinn, K. V.; Donnelly, V. M.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, Issue 5
https://doi.org/10.1116/1.579082
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September 1994 |
The chemisorption of chlorosilanes and chlorine on Si(111)7 × 7
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June 1990 |
On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching
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August 1999 |
Composition of trench sidewalls and bottoms for SiO2-masked Si(100) etched in Cl2 plasmas
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June 2000 |
Diagnostics of inductively coupled chlorine plasmas: Measurements of the neutral gas temperature
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October 2000 |
Spatially Averaged (Global) Model of Time Modulated High Density Chlorine Plasmas
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February 1997 |
Role of etch products in polysilicon etching in a high-density chlorine discharge
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March 1996 |
Diagnostics of chlorine inductively coupled plasmas. Measurement of electron temperatures and electron energy distribution functions
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February 2000 |
Spatially averaged (global) model of time modulated high density argon plasmas
- Ashida, Sumio; Lee, C.; Lieberman, M. A.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 13, Issue 5
https://doi.org/10.1116/1.579494
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September 1995 |
Influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO3 films in Ar∕SF6 plasmas
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May 2007 |