Controlling the dopant profile for SRH suppression at low current densities in λ ≈ 1330 nm GaInAsP light-emitting diodes
- Stanford Univ., CA (United States)
- California Institute of Technology (CalTech), Pasadena, CA (United States)
The quantum efficiency of double hetero-junction light-emitting diodes (LEDs) can be significantly enhanced at low current density by tailoring the spatial profile of dopants to suppress Shockley–Read–Hall recombination. To demonstrate this effect, we model, design, grow, fabricate, and test a GaInAsP LED (λ≈ 1330 nm) with an unconventional dopant profile. Compared against that of our control design, which is a conventional n+-n-p+ double hetero-junction LED, the dopant profile near the n-p+ hetero-structure of the design displaces the built-in electric field in such a way that the J02 space charge recombination current is suppressed. The design principle generalizes to other material systems and could be applicable to efforts to observe and exploit electro-luminescent refrigeration at practical power densities.
- Research Organization:
- California Institute of Technology (CalTech), Pasadena, CA (United States); Stanford Univ., CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- SC0001293; SC0019140
- OSTI ID:
- 1801470
- Journal Information:
- Applied Physics Letters, Vol. 116, Issue 20; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Growth of lattice-matched GaInAsP grown on vicinal GaAs(001) substrates within the miscibility gap for solar cells
High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells