Strain Effects on Rashba Spin–Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

Tai, Chia‐Tse; Chiu, Po‐Yuan; Liu, Chia‐You; Kao, Hsiang‐Shun; Harris, Charles Thomas; Lu, Tzu‐Ming; Hsieh, Chi‐Ti; Chang, Shu‐Wei; Li, Jiun‐Yun

doi:10.1002/adma.202007862

Title: Strain Effects on Rashba Spin–Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

Journal Article · Tue May 25 00:00:00 EDT 2021 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202007862· OSTI ID:1787524

Tai, Chia‐Tse ^[1]; Chiu, Po‐Yuan ^[1]; Liu, Chia‐You ^[1]; Kao, Hsiang‐Shun ^[1]; Harris, Charles Thomas ^[2]; Lu, Tzu‐Ming ^[2]; Hsieh, Chi‐Ti ^[3]; Chang, Shu‐Wei ^[3];

^[4]

National Taiwan Univ., Taipei (Taiwan)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Academia Sinica, Taipei (Taiwan)
National Taiwan Univ., Taipei (Taiwan); Taiwan Semiconductor Research Inst., Hsinchu (Taiwan)

A demonstration of 2D hole gases in GeSn/Ge heterostructures with a mobility as high as 20 000 cm² V^–1 s^–1 is given. Both the Shubnikov–de Haas oscillations and integer quantum Hall effect are observed, indicating high sample quality. The Rashba spin-orbit coupling (SOC) is investigated via magneto-transport. Further, a transition from weak localization to weak anti-localization is observed, which shows the tunability of the SOC strength by gating. The magneto-transport data are fitted to the Hikami–Larkin–Nagaoka formula. The phase-coherence and spin-relaxation times, as well as spin-splitting energy and Rashba coefficient of the k-cubic term, are extracted. Furthermore, the analysis reveals that the effects of strain and confinement potential at a high fraction of Sn suppress the Rashba SOC caused by the GeSn/Ge heterostructures.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1787524

Report Number(s):: SAND-2021-4493J; 695519

Journal Information:: Advanced Materials, Vol. 33, Issue 26; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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