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Title: Stability Evaluation of Candidate Precursors for Chemical Vapor Deposition of Hafnium Diboride (HfB 2 )

Journal Article · · ACS Omega
ORCiD logo [1];  [1]; ORCiD logo [2];  [2]
  1. Geochemistry Department, Sandia National Laboratories, Albuquerque, New Mexico 87106, United States
  2. Advanced Materials Laboratory, Sandia National Laboratories, 1001 University Blvd., Albuquerque, New Mexico 87106, United States

Alternative candidate precursors to [Hf(BH4)4] for low-temperature chemical vapor deposition of hafnium diboride (HfB2) films were identified using density functional theory simulations of molecules with the composition [Hf(BH4)2L2], where L = -OH, -OMe, -O-t-Bu, -NH2, -N= C=O, -N(Me)2, and -N(CH2)5NH2 (1-piperidin-2-amine referred to as Pip2A). Disassociation energies (ED), potential energy surface (PES) scans, ionization potentials, and electron affinities were all calculated to identify the strength of the Hf–L bond and the potential reactivity of the candidate precursor. Ultimately, the low ED (2.07 eV) of the BH4 ligand removal from the Hf atom in [Hf(BH4)4] was partially attributed to an intermediate state where [Hf(BH4)3(H)] and BH3 is formed. Of the candidate precursors investigated, three exhibited a similar mechanism, but only -Pip2A had a PES scan that indicated binding competitive with [Hf(BH4)4], making it a viable candidate for further study.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
US Department of the Navy, Office of Naval Research (ONR); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
NA0003525
OSTI ID:
1780512
Alternate ID(s):
OSTI ID: 1820428
Report Number(s):
SAND-2021-10734J
Journal Information:
ACS Omega, Journal Name: ACS Omega Vol. 6 Journal Issue: 17; ISSN 2470-1343
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

References (44)

Remote plasma treatment of Si surfaces: Enhanced nucleation in low-temperature chemical vapor deposition journal October 2009
A new SiC/HfB2 based low power gas sensor journal June 2001
Nanowear of Hafnium Diboride Thin Films journal August 2010
Hafnium diboride thin films by chemical vapor deposition from a single source precursor
  • Jayaraman, Sreenivas; Yang, Yu; Kim, Do Young
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, Issue 6 https://doi.org/10.1116/1.2049307
journal November 2005
Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Water Precursors journal May 2007
Mechanical properties of HfB2.7 nanocrystalline thin films journal June 2011
Mechanism of Activation of a Hafnium Pyridyl−Amide Olefin Polymerization Catalyst:  Ligand Modification by Monomer journal June 2007
Characterization of hafnium diboride thin film resistors by r.f. magnetron sputtering journal August 1996
Ethylene Complexes of the Early Transition Metals: Crystal Structures of [HfEt 4 (C 2 H 4 ) 2− ] and the Negative-Oxidation-State Species [TaHEt(C 2 H 4 ) 3 3− ] and [WH(C 2 H 4 ) 4 3− ] journal February 2008
Hard HfB 2 tip-coatings for ultrahigh density probe-based storage journal August 2012
Epitaxial growth of HfB2(0001) on Si(001) by etching through a SiO2 layer journal June 2008
ZrB2-HfB2 solid solutions as electrode materials for hydrogen reaction in acidic and basic solutions journal February 2017
The electronic structure of and journal August 2011
Growth and phase stabilization of HfO2 thin films by ALD using novel precursors journal January 2010
Effect of Hf-doping on electrochemical performance of anatase TiO 2 as an anode material for lithium storage journal June 2018
Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO2 and HfO2 Thin Films journal July 2002
Ab Initio Computations of Electronic, Mechanical, and Thermal Properties of ZrB 2 and HfB 2 journal July 2011
Ab initio effective core potentials for molecular calculations. Potentials for the transition metal atoms Sc to Hg journal January 1985
A study on the development of CVD precursors V – syntheses and characterization of new N-alkoxy-β-ketoiminate complexes of titanium journal January 2004
Synthesis, Characterization, and Nanomaterials Generated from 6,6′-(((2-Hydroxyethyl)azanediyl)bis(methylene))bis(2,4-di- tert -butylphenol) Modified Group 4 Metal Alkoxides journal August 2018
Role of nucleation layer morphology in determining the statistical roughness of CVD-grown thin films
  • Babar, Shaista; Li, Tian T.; Abelson, John R.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 6 https://doi.org/10.1116/1.4895106
journal November 2014
Toward reliable density functional methods without adjustable parameters: The PBE0 model journal April 1999
Growth Inhibitor To Homogenize Nucleation and Obtain Smooth HfB 2 Thin Films by Chemical Vapor Deposition journal February 2013
HfB2 and Hf–B–N hard coatings by chemical vapor deposition journal June 2006
Tribological behavior of hafnium diboride thin films journal December 2006
Tailored Organometallics as Low-Temperature CVD Precursors to Thin Films journal January 1988
CVD Growth Kinetics of HfB 2 Thin Films from the Single-Source Precursor Hf(BH 4 ) 4 journal September 2006
Molecular Structures of Two Metal Tetrakis(tetrahydroborates), Zr(BH 4 ) 4 and U(BH 4 ) 4 :  Equilibrium Conformations and Barriers to Internal Rotation of the Triply Bridging BH 4 Groups journal December 2002
Ionization Potential, Electron Affinity, Electronegativity, Hardness, and Electron Excitation Energy:  Molecular Properties from Density Functional Theory Orbital Energies journal May 2003
A brief introduction to transition metals in unusual oxidation states journal March 2013
Atomic Layer Deposition of HfO 2 Thin Films Exploiting Novel Cyclopentadienyl Precursors at High Temperatures journal June 2007
Titanium, zirconium, and hafnium tetrahydroborates as "tailored" CVD precursors for metal diboride thin films journal March 1988
Molecular structure of Hf(BH4)4 investigated by quantum mechanical calculations and gas-phase electron diffraction journal January 2004
First-principles study of the elastic and thermodynamic properties of HfB2 with AlB2 structure under high pressure journal October 2011
‘Old Chemistries’ for new applications: Perspectives for development of precursors for MOCVD and ALD applications journal December 2013
Low Temperature Chemical Vapor Deposition of Hafnium Nitride−Boron Nitride Nanocomposite Films journal November 2009
Development of atmospheric pressure CVD processes for highquality transparent conductive oxides journal August 2010
Theoretical Study of the Electronic Structures of HfB 2 (0001)-X (X = Li−Ne) Surfaces journal September 2004
Nanomechanical and nanotribological behaviors of hafnium boride thin films journal November 2015
Electronic Structure of M(BH 4 ) 4 , M = Zr, Hf, and U, by Variable Photon-Energy Photoelectron Spectroscopy and Density Functional Calculations journal October 2005
Zirconium Borohydride as a Zirconium Boride Precursor journal April 1988
Insertion reactions of phenyl isocyanate into hafnium nitrogen bonds: synthesis and reactivity of hafnium complexes bearing substituted pyrrolyl ligands journal October 2004
Nanoscratch and nanofriction behavior of hafnium diboride thin films journal August 2008
Formation of an ordered Si dimer structure on HfB 2 ( 0001 ) journal October 2002