Silicon Device Scaling to the Sub-10-nm Regime
|
journal
|
December 2004 |
The chips are down for Moore’s law
|
journal
|
February 2016 |
Cramming More Components Onto Integrated Circuits
|
journal
|
January 1998 |
Sputtering Yields of Several Semiconducting Compounds under Argon Ion Bombardment
|
journal
|
June 1966 |
Impact of hydrofluorocarbon molecular structure parameters on plasma etching of ultra-low-K dielectric
- Li, Chen; Gupta, Rahul; Pallem, Venkateswara
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 3
https://doi.org/10.1116/1.4944609
|
journal
|
May 2016 |
Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
|
journal
|
May 1979 |
Atomic Layer Etching at the Tipping Point: An Overview
|
journal
|
January 2015 |
Fluorocarbon assisted atomic layer etching of SiO 2 using cyclic Ar/C 4 F 8 plasma
- Metzler, Dominik; Bruce, Robert L.; Engelmann, Sebastian
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2
https://doi.org/10.1116/1.4843575
|
journal
|
March 2014 |
Application of cyclic fluorocarbon/argon discharges to device patterning
- Metzler, Dominik; Uppireddi, Kishore; Bruce, Robert L.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 1
https://doi.org/10.1116/1.4935460
|
journal
|
January 2016 |
Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4
- Li, Chen; Metzler, Dominik; Lai, Chiukin Steven
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 4
https://doi.org/10.1116/1.4954961
|
journal
|
July 2016 |
Achieving ultrahigh etching selectivity of SiO 2 over Si 3 N 4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors
|
journal
|
July 2018 |
Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
|
journal
|
September 2016 |
Fluorocarbon assisted atomic layer etching of SiO 2 and Si using cyclic Ar/C 4 F 8 and Ar/CHF 3 plasma
- Metzler, Dominik; Li, Chen; Engelmann, Sebastian
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 1
https://doi.org/10.1116/1.4935462
|
journal
|
January 2016 |
Investigation of thin oxide layer removal from Si substrates using an SiO2atomic layer etching approach: the importance of the reactivity of the substrate
|
journal
|
June 2017 |
Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma
- Kawakami, Masatoshi; Metzler, Dominik; Li, Chen
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 4
https://doi.org/10.1116/1.4949260
|
journal
|
May 2016 |
Observation of ion bombardment damage in silicon
|
journal
|
June 1968 |
Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure
|
journal
|
March 2019 |
Etching with atomic precision by using low electron temperature plasma
|
journal
|
June 2017 |
Atomic fluorine densities in electron beam generated plasmas: A high ion to radical ratio source for etching with atomic level precision
- Boris, David R.; Petrova, Tzvetelina B.; Petrov, George M.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 1
https://doi.org/10.1116/1.4971416
|
journal
|
January 2017 |
Focused, Nanoscale Electron-Beam-Induced Deposition and Etching
|
journal
|
September 2006 |
Focused electron-beam-induced etching of silicon dioxide
|
journal
|
August 2005 |
Direct writing onto Si by electron beam stimulated etching
|
journal
|
November 1987 |
Generation of large cross-sectional area electron beams by a fore-vacuum-pressure plasma electron source based on the arc discharge
|
conference
|
January 2016 |
Ceramic coating deposition by electron beam evaporation
|
journal
|
September 2017 |
Fore-Vacuum Plasma Electron Gun of Ribbon Beam
|
conference
|
January 2003 |
The use of hollow cathodes in deposition processes: A critical review
|
journal
|
March 2015 |
Hollow cathode vacuum arc plasma electron source for the generation of a high-current DC electron beam
|
journal
|
December 2016 |
A plasma electron source for generating beam plasma at low gas pressures
|
journal
|
September 2017 |
Hollow-cathode plasma electron gun for beam generation at forepump gas pressure
|
journal
|
July 1999 |
Development of plasma cathode electron guns
|
journal
|
May 1999 |
Moderate pressure plasma source of nonthermal electrons
|
journal
|
May 2018 |
Precise control of ion and radical production using electron beam generated plasmas
|
journal
|
November 2018 |
Electron Beam Generated Plasmas for Ultra Low T e Processing
|
journal
|
January 2015 |
Electron beam generated plasmas: Characteristics and etching of silicon nitride
|
journal
|
January 2017 |
Measuring the electron density, temperature, and electronegativity in electron beam-generated plasmas produced in argon/SF 6 mixtures
|
journal
|
April 2015 |
Three-dimensional model of electron beam generated plasma
|
journal
|
May 2017 |
Model of a radio-frequency low electron temperature plasma source
|
journal
|
July 2018 |
Atomic precision etch using a low-electron temperature plasma
|
conference
|
March 2016 |
Ion energy distribution of an inductively coupled radiofrequency discharge in argon and oxygen
|
journal
|
November 2008 |
Chemical dry etching of silicon nitride and silicon dioxide using CF 4 /O 2 /N 2 gas mixtures
- Kastenmeier, B. E. E.; Matsuo, P. J.; Beulens, J. J.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 14, Issue 5
https://doi.org/10.1116/1.580203
|
journal
|
September 1996 |
Study of plasma - surface interactions: chemical dry etching and high-density plasma etching
|
journal
|
May 1996 |
Role of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon
- Matsuo, P. J.; Kastenmeier, B. E. E.; Beulens, J. J.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 15, Issue 4
https://doi.org/10.1116/1.580795
|
journal
|
July 1997 |
Nonequilibrium EEDF in gas discharge plasmas
|
journal
|
June 2006 |
Probe measurements of electron-energy distributions in plasmas: what can we measure and how can we achieve reliable results?
|
journal
|
May 2011 |
Measurement of electron energy distribution in low-pressure RF discharges
|
journal
|
March 1992 |
Experimental and theoretical evaluations of electron temperature in continuous electron beam generated plasmas
|
journal
|
March 2008 |
Floating potential of emitting surfaces in plasmas with respect to the space potential
|
journal
|
March 2018 |
Generation of uniform electron beam plasma in a dielectric flask at fore-vacuum pressures
|
journal
|
December 2015 |
Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas
- Kastenmeier, B. E. E.; Matsuo, P. J.; Oehrlein, G. S.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 1
https://doi.org/10.1116/1.1329118
|
journal
|
January 2001 |
Highly selective etching of silicon nitride over silicon and silicon dioxide
- Kastenmeier, B. E. E.; Matsuo, P. J.; Oehrlein, G. S.
-
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 17, Issue 6
https://doi.org/10.1116/1.582097
|
journal
|
November 1999 |