Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors

Rajapakse, Manthila; Anderson, George; Zhang, Congyan; Musa, Rajib; Walter, Jackson; Yu, Ming; Sumanasekera, Gamini; Jasinski, Jacek B.

doi:10.1039/c9cp06547d

Title: Gas adsorption and light interaction mechanism in phosphorene-based field-effect transistors

Journal Article · Fri Feb 21 00:00:00 EST 2020 · Physical Chemistry Chemical Physics. PCCP

DOI:https://doi.org/10.1039/c9cp06547d· OSTI ID:1773995

Rajapakse, Manthila ^[1]; Anderson, George ^[1]; Zhang, Congyan ^[1]; Musa, Rajib ^[1]; Walter, Jackson ^[1]; Yu, Ming ^[1]; Sumanasekera, Gamini ^[1];

^[1]

Univ. of Louisville, KY (United States)

Phosphorene-based field effect transistor (FET) structures were fabricated to study the gas- and photo-detection properties of phosphorene. The interplay between device performance and environmental conditions was probed and analyzed using in situ transport measurements. The device structures were exposed to different chemical and light environments to understand how they perform under different external stimuli. For the gas/molecule detection studies, inert (Ar), as well as, oxidizing (N₂O), and reducing (H₂ and also N₂H₄) agents were selected. The FET structure was exposed to these different gases, and the effect of each gas on the device resistance was measured. The study showed varying response towards different molecules. Specifically, no significant resistance change was observed upon exposure to Ar, while H₂ and N₂H₄ were found to decrease the resistance and N₂O had the opposite effect resulting in an increase in resistance. This work is the first demonstration for the detection of N₂H₂ and N₂O using a phosphorene-based system. These phosphorene-based FET structures were also found to be sensitive to light exposure. When such structure was irradiated with light, the current modulation was lost. The observed resistance changes can be explained as a result of the modulation of the Schottky barrier at the phosphorene-electrical contact interface due to the adsorbed molecules and charge transfer, and/or photo-induced carrier generation. Furthermore, the results were consistent with the transfer characteristics of V_dsv_s. V_g.

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Research Organization:: Univ. of Louisville, KY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0019348

OSTI ID:: 1773995

Alternate ID(s):: OSTI ID: 1602312

Journal Information:: Physical Chemistry Chemical Physics. PCCP, Vol. 22, Issue 10; ISSN 1463-9076

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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