Complementary junction heterostructure field-effect transistor
Patent
·
OSTI ID:170479
A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corp., Albuquerque, NM (United States)
- Patent Number(s):
- US 5,479,033/A/
- Application Number:
- PAN: 8-250,088
- OSTI ID:
- 170479
- Resource Relation:
- Other Information: PBD: 26 Dec 1995
- Country of Publication:
- United States
- Language:
- English
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