The effects of electron- and ion-beam irradiation on the mechanical response of silicon microresonators
- Electrical Engineering Department, Cornell University, Ithaca, New York 14853 (United States)
We have investigated the mechanical response of silicon microresonators exposed to electron- and ion-beam irradiation. The microresonators were single-crystal silicon structures consisting of beams {similar_to}0.7 {mu}m wide, and having preirradiation frequency of 48 kHz and {ital Q}{sup {minus}1} of 2.5{times}10{sup {minus}5}. For the electron-beam experiment, microresonator response was measured after 10 min irradiations with 10 keV electrons, for beam currents ranging from 2 to 20 nA. The frequency shows a monotonic increase with electron dose, while the {ital Q}{sup {minus}1} shows a peak versus dose. For the ion-beam experiment, the microresonator was irradiated with 3.5 keV Ar{sup +} ions for timed intervals up to 10 min. The microresonator frequency and {ital Q}{sup {minus}1} exhibit extrema versus irradiation time. These mechanical-response changes are significant for both electron- and ion-irradiation experiments, with frequency shifts {similar_to}0.1% and {ital Q}{sup {minus}1} changes of a factor {similar_to}3. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}
- OSTI ID:
- 165911
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 13, Issue 6; Other Information: PBD: Nov 1995
- Country of Publication:
- United States
- Language:
- English
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