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Title: Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface

Journal Article · · Nature Communications

Abstract The emergence of saddle-point Van Hove singularities (VHSs) in the density of states, accompanied by a change in Fermi surface topology, Lifshitz transition, constitutes an ideal ground for the emergence of different electronic phenomena, such as superconductivity, pseudo-gap, magnetism, and density waves. However, in most materials the Fermi level, $$$${E}_{{\rm{F}}}$$$$ E F , is too far from the VHS where the change of electronic topology takes place, making it difficult to reach with standard chemical doping or gating techniques. Here, we demonstrate that this scenario can be realized at the interface between a Mott insulator and a band insulator as a result of quantum confinement and correlation enhancement, and easily tuned by fine control of layer thickness and orbital occupancy. These results provide a tunable pathway for Fermi surface topology and VHS engineering of electronic phases.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Gordon and Betty Moore Foundation (GBMF); National Science Foundation (NSF); Funai Foundation for Information Technology
Grant/Contract Number:
AC02-05-CH11231; AC02-05CH11231; GBMF4859; 1740213
OSTI ID:
1619601
Alternate ID(s):
OSTI ID: 1581087
Journal Information:
Nature Communications, Journal Name: Nature Communications Vol. 10 Journal Issue: 1; ISSN 2041-1723
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United Kingdom
Language:
English
Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

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