Design of the first full size ATLAS ITk strip sensor for the endcap region
- Consejo Superior de Investigaciones Cientificas (CSIC), Valencia (Spain). Univ. Politecnica de Valencia (CSIC-UPV)
- Hamamatsu Photonics K.K. (Japan)
- Univ. of California, Santa Cruz, CA (United States)
- Univ. of Tsukuba (Japan)
- TRIUMF, Vancouver, BC (Canada)
- Univ. of Toronto, ON (Canada)
- Univ. Autonoma de Barcelona (Spain). Consejo Superior de Investigaciones Cientificas (CSIC), Barcelona (Spain)
- National Lab. for High Energy Physics (KEK), Tsukuba (Japan)
The ATLAS collaboration is designing the all-silicon Inner Tracker (ITk) that will operate in the HL-LHC replacing the current design. The silicon microstrip sensors for the barrel and the endcap regions in the ITk are fabricated in 6 inch, p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. The radiation tolerance and specific system issues like the need for slim edge of 450 μm have been tested with square shaped sensors intended for the barrel part of the tracker. This work presents the design of the first full size silicon microstrip sensor for the endcap region with a slim edge of 450 μm. The strip endcaps will consist of several wheels with two layers of silicon strip sensors each. The strips have to lie along the azimuthal direction, apart from a small stereo angle rotation (20 mrad on each side, giving 40 mrad total) for measuring the second coordinate of tracks. This stereo angle is built into the strip layout of the sensor and, in order to avoid orphan strips, the sensor edges are inclined by the stereo angle. On top of this, the top and bottom edges are designed as arcs to have equal length strips. Together with the design of this new Stereo Annulus sensor, we will report on the initial measurements of the leakage current as a function of bias voltage, after dicing, and the depletion voltage.
- Research Organization:
- Univ. of California, Santa Cruz, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- SC0010107
- OSTI ID:
- 1611344
- Alternate ID(s):
- OSTI ID: 1703440
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 924, Issue C; ISSN 0168-9002
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Development of n+-in-p large-area silicon microstrip sensors for very high radiation environments – ATLAS12 design and initial results
|
journal | November 2014 |
Evaluation of slim-edge, multi-guard, and punch-through-protection structures before and after proton irradiation
|
journal | January 2013 |
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
|
journal | April 2011 |
Evaluation of the performance of irradiated silicon strip sensors for the forward detector of the ATLAS Inner Tracker Upgrade
|
journal | September 2016 |
Sensors for the End-cap prototype of the Inner Tracker in the ATLAS Detector Upgrade
|
journal | October 2016 |
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