High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Reddy, Pramod; Hayden Breckenridge, M.; Guo, Qiang; Klump, Andrew; Khachariya, Dolar; Pavlidis, Spyridon; Mecouch, Will; Mita, Seiji; Moody, Baxter; Tweedie, James; Kirste, Ronny; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko

doi:10.1063/1.5138127

Title: High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Journal Article · Mon Feb 24 00:00:00 EST 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5138127· OSTI ID:1601314

;

; Khachariya, Dolar; Pavlidis, Spyridon;

; Mita, Seiji; Moody, Baxter; Tweedie, James; Kirste, Ronny; Kohn, Erhard; Collazo, Ramon;

We demonstrate large area (25 000 μm2) Al-rich AlGaN-based avalanche photodiodes (APDs) grown on single crystal AlN substrates operating with differential (the difference in photocurrent and dark current) signal gain of 100 000 at 90 pW (<1 μW cm−2) illumination with very low dark currents <0.1 pA at room temperature under ambient light. The high gain in large area AlGaN APDs is attributed to a high breakdown voltage at 340 V, corresponding to very high breakdown fields ∼9 MV cm−1 as a consequence of low threading and screw dislocation densities < 103 cm−2. The maximum charge collection efficiency of 30% was determined at 255 nm, corresponding to the bandgap of Al0.65Ga0.35N, with a response of 0.06 A/W. No response was detected for λ > 280 nm, establishing solar blindness of the device.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: NA-22-WMS-66204

OSTI ID:: 1601314

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Vol. 116 Journal Issue: 8; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 29 works

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References (41)

Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates Saitoh, Yu; Sumiyoshi, Kazuhide; Okada, Masaya Applied Physics Express, Vol. 3, Issue 8 https://doi.org/10.1143/APEX.3.081001	journal	July 2010
Hybrid functional calculations of $D X$ centers in AlN and GaN Gordon, L.; Lyons, J. L.; Janotti, A. Physical Review B, Vol. 89, Issue 8 https://doi.org/10.1103/PhysRevB.89.085204	journal	February 2014
A 271.8 nm deep-ultraviolet laser diode for room temperature operation Zhang, Ziyi; Kushimoto, Maki; Sakai, Tadayoshi Applied Physics Express, Vol. 12, Issue 12 https://doi.org/10.7567/1882-0786/ab50e0	journal	November 2019
Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates Wuu, Dong-Sing; Wu, Hsueh-Wei; Chen, Shih-Ting Journal of Crystal Growth, Vol. 311, Issue 10 https://doi.org/10.1016/j.jcrysgro.2009.01.107	journal	May 2009
Carbon as a source for yellow luminescence in GaN: Isolated C _N defect or its complexes Christenson, Sayre G.; Xie, Weiyu; Sun, Y. Y. Journal of Applied Physics, Vol. 118, Issue 13 https://doi.org/10.1063/1.4932206	journal	October 2015
Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN Reddy, Pramod; Washiyama, Shun; Kaess, Felix Journal of Applied Physics, Vol. 122, Issue 24 https://doi.org/10.1063/1.5002682	journal	December 2017
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates Hsu, J. W. P.; Manfra, M. J.; Molnar, R. J. Applied Physics Letters, Vol. 81, Issue 1 https://doi.org/10.1063/1.1490147	journal	July 2002
Deep UV photon-counting detectors and applications Shaw, Gary A.; Siegel, Andrew M.; Model, Joshua SPIE Defense, Security, and Sensing, SPIE Proceedings https://doi.org/10.1117/12.820825	conference	May 2009
The role of threading dislocations in the physical properties of GaN and its alloys Speck, J. S.; Rosner, S. J. Physica B: Condensed Matter, Vol. 273-274 https://doi.org/10.1016/S0921-4526(99)00399-3	journal	December 1999
Dislocation-assisted tunnelling of charge carriers across the Schottky barrier on the hydride vapour phase epitaxy grown GaN Chatterjee, Abhishek; Khamari, Shailesh K.; Dixit, V. K. Journal of Applied Physics, Vol. 118, Issue 17 https://doi.org/10.1063/1.4934862	journal	November 2015
Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition Keller, S.; Keller, B. P.; Wu, Y. ‐F. Applied Physics Letters, Vol. 68, Issue 11 https://doi.org/10.1063/1.115687	journal	March 1996
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN Gaddy, Benjamin E.; Bryan, Zachary; Bryan, Isaac Applied Physics Letters, Vol. 104, Issue 20 https://doi.org/10.1063/1.4878657	journal	May 2014
AlGaN solar-blind avalanche photodiodes with high multiplication gain Sun, Lu; Chen, Jilin; Li, Jianfei Applied Physics Letters, Vol. 97, Issue 19 https://doi.org/10.1063/1.3515903	journal	November 2010
Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes Huang, Y.; Chen, D. J.; Lu, H. Applied Physics Letters, Vol. 101, Issue 25 https://doi.org/10.1063/1.4772984	journal	December 2012
Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes Demchenko, D. O.; Diallo, I. C.; Reshchikov, M. A. Physical Review Letters, Vol. 110, Issue 8 https://doi.org/10.1103/PhysRevLett.110.087404	journal	February 2013
Vanadium-based Ohmic contacts to n-AlGaN in the entire alloy composition France, Ryan; Xu, Tao; Chen, Papo Applied Physics Letters, Vol. 90, Issue 6 https://doi.org/10.1063/1.2458399	journal	February 2007
Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN Haidet, Brian B.; Sarkar, Biplab; Reddy, Pramod Japanese Journal of Applied Physics, Vol. 56, Issue 10 https://doi.org/10.7567/JJAP.56.100302	journal	September 2017
Carbon impurities and the yellow luminescence in GaN Lyons, J. L.; Janotti, A.; Van de Walle, C. G. Applied Physics Letters, Vol. 97, Issue 15 https://doi.org/10.1063/1.3492841	journal	October 2010
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy Kyle, Erin C. H.; Kaun, Stephen W.; Burke, Peter G. Journal of Applied Physics, Vol. 115, Issue 19 https://doi.org/10.1063/1.4874735	journal	May 2014
Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers Kappers, M. J.; Datta, R.; Oliver, R. A. Journal of Crystal Growth, Vol. 300, Issue 1 https://doi.org/10.1016/j.jcrysgro.2006.10.205	journal	March 2007
High-Gain AlGaN Solar-Blind Avalanche Photodiodes Shao, Zhen Guang; Chen, Dun Jun; Lu, Hai IEEE Electron Device Letters, Vol. 35, Issue 3 https://doi.org/10.1109/LED.2013.2296658	journal	March 2014
Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition Xing, Huili; Green, Daniel S.; Yu, Haijiang Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 1 https://doi.org/10.1143/JJAP.42.50	journal	January 2003
Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition Kaess, Felix; Mita, Seiji; Xie, Jingqiao Journal of Applied Physics, Vol. 120, Issue 10 https://doi.org/10.1063/1.4962017	journal	September 2016
Numerical simulation of deep-UV avalanche photodetectors Bellotti, Enrico; Bertazzi, Francesco SPIE OPTO, SPIE Proceedings https://doi.org/10.1117/12.2040789	conference	March 2014
Formation of vanadium-based ohmic contacts to n-GaN Song, June O.; Kim, Sang-Ho; Kwak, Joon Seop Applied Physics Letters, Vol. 83, Issue 6 https://doi.org/10.1063/1.1598284	journal	August 2003
Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates Dalmau, R.; Moody, B.; Schlesser, R. Journal of The Electrochemical Society, Vol. 158, Issue 5 https://doi.org/10.1149/1.3560527	journal	January 2011
A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE Sakai, S.; Wang, T.; Morishima, Y. Journal of Crystal Growth, Vol. 221, Issue 1-4 https://doi.org/10.1016/S0022-0248(00)00709-0	journal	December 2000
Suppression of Mg propagation into subsequent layers grown by MOCVD Agarwal, Anchal; Tahhan, Maher; Mates, Tom Journal of Applied Physics, Vol. 121, Issue 2 https://doi.org/10.1063/1.4972031	journal	January 2017
Seeded growth of AlN bulk single crystals by sublimation Schlesser, R.; Dalmau, R.; Sitar, Z. Journal of Crystal Growth, Vol. 241, Issue 4, p. 416-420 https://doi.org/10.1016/S0022-0248(02)01319-2	journal	June 2002
Origins of optical absorption and emission lines in AlN Yan, Qimin; Janotti, Anderson; Scheffler, Matthias Applied Physics Letters, Vol. 105, Issue 11 https://doi.org/10.1063/1.4895786	journal	September 2014
On Ni/Au Alloyed Contacts to Mg-Doped GaN Sarkar, Biplab; Reddy, Pramod; Klump, Andrew Journal of Electronic Materials, Vol. 47, Issue 1 https://doi.org/10.1007/s11664-017-5775-3	journal	September 2017
On the origin of the 265 nm absorption band in AlN bulk crystals Collazo, Ramón; Xie, Jinqiao; Gaddy, Benjamin E. Applied Physics Letters, Vol. 100, Issue 19 https://doi.org/10.1063/1.4717623	journal	May 2012
Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range Hahn, L.; Fuchs, F.; Kirste, L. Applied Physics Letters, Vol. 112, Issue 15 https://doi.org/10.1063/1.5022660	journal	April 2018
A numerical study of carrier impact ionization in Al _x Ga ₁₋ _x N Bellotti, Enrico; Bertazzi, Francesco Journal of Applied Physics, Vol. 111, Issue 10 https://doi.org/10.1063/1.4719967	journal	May 2012
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD Bryan, Isaac; Bryan, Zachary; Washiyama, Shun Applied Physics Letters, Vol. 112, Issue 6 https://doi.org/10.1063/1.5011984	journal	February 2018
Advances in Bulk Crystal Growth of AlN and GaN Ehrentraut, Dirk; Sitar, Zlatko MRS Bulletin, Vol. 34, Issue 4 https://doi.org/10.1557/mrs2009.76	journal	April 2009
X-ray characterization of composition and relaxation of AlxGa1−xN(0≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy Tweedie, James; Collazo, Ramon; Rice, Anthony Journal of Applied Physics, Vol. 108, Issue 4 https://doi.org/10.1063/1.3457149	journal	August 2010
Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate Usami, Shigeyoshi; Ando, Yuto; Tanaka, Atsushi Applied Physics Letters, Vol. 112, Issue 18 https://doi.org/10.1063/1.5024704	journal	April 2018
The role of surface kinetics on composition and quality of AlGaN Bryan, Isaac; Bryan, Zachary; Mita, Seiji Journal of Crystal Growth, Vol. 451 https://doi.org/10.1016/j.jcrysgro.2016.06.055	journal	October 2016
Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications Collazo, Ramón; Mita, Seiji; Xie, Jinqiao physica status solidi (c), Vol. 8, Issue 7-8 https://doi.org/10.1002/pssc.201000964	journal	May 2011
Point-Defect Nature of the Ultraviolet Absorption Band in AlN Alden, D.; Harris, J. S.; Bryan, Z. Physical Review Applied, Vol. 9, Issue 5 https://doi.org/10.1103/PhysRevApplied.9.054036	journal	May 2018

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