Electron Transport Properties of AlxGa1–xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations

Fang, Jingtian; Fischetti, Massimo V.; Schrimpf, Ronald D.; Reed, Robert A.; Bellotti, Enrico; Pantelides, Sokrates T.

doi:10.1103/PhysRevApplied.11.044045

Title: Electron Transport Properties of ${Al}_{x} {Ga}_{1 - x} N / Ga N$ Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations

Journal Article · Mon Apr 15 00:00:00 EDT 2019 · Physical Review Applied

DOI:https://doi.org/10.1103/PhysRevApplied.11.044045· OSTI ID:1597930

Fang, Jingtian ^[1]; Fischetti, Massimo V. ^[2]; Schrimpf, Ronald D. ^[3]; Reed, Robert A. ^[3]; Bellotti, Enrico ^[4]; Pantelides, Sokrates T. ^[3]

Vanderbilt Univ., Nashville, TN (United States); Boston Univ., MA (United States)
Univ. of Texas at Dallas, Richardson, TX (United States)
Vanderbilt Univ., Nashville, TN (United States)
Boston Univ., MA (United States)

High-electron-mobility transistors (HEMTs) based on Al_xGa_1–xN/GaN heterostructures have great potential for applications in power electronics and radio frequency applications. Operating under large bias and electric fields, hot electrons are present in the channel where they can activate preexisting benign defects that cause scattering or carrier trapping, resulting in device degradation, such as threshold-voltage shifts and transconductance degradation. We report a comprehensive investigation of the electron transport properties of wurtzite-phase GaN and AlN and of an Al_0.25Ga_0.75N/GaN HEMT by solving the Boltzmann transport equation with a synchronous ensemble Monte Carlo technique and employing first-principles electronic properties, including the full energy bands, phonon dispersions, and electron-phonon scattering rates. We find that, for electron collisions with the highest-energy optical phonon mode, nonpolar scattering by optical phonons contributes comparable to polar scattering. Polar scattering with acoustic phonons, that is, piezoelectric scattering, is found to be as important as the polar scattering with optical phonons for low-energy electrons at room temperature. Here, we compare the calculated high-field transport characteristics of bulk GaN with previously reported results. We also calculate the nonpolar acoustic deformation potential, nonpolar optical deformation potential, and high-field transport characteristics of bulk AlN. We find that inclusion of piezoelectric scattering results in a low-field electron mobility of approximately 450cm²/(V s), which is very close to the experimental value. Simulation results are presented for an Al_0.25Ga_0.75N/GaN HEMT, including electric field, average carrier kinetic energy, and drift velocity in the channel. Finally, we present the carrier energy distribution function in the conducting channel, which is key to accurately determine hot-carrier-caused device degradation and identify possible routes to an improved device design.

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Research Organization:: Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Science Foundation (NSF)

Grant/Contract Number:: FG02-09ER46554; W911NF-12-2-0023; EECS-1508898

OSTI ID:: 1597930

Journal Information:: Physical Review Applied, Vol. 11, Issue 4; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 15 works

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71 CLASSICAL AND QUANTUM MECHANICS
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Title: Electron Transport Properties of Al x Ga 1 – x N / Ga N Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations

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Title: Electron Transport Properties of ${Al}_{x} {Ga}_{1 - x} N / Ga N$ Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations