Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN
- Inst. de Ciència de Materials de Barcelona-CSIC, Bellaterra (Spain)
- Inst. de Ciència de Materials de Barcelona-CSIC, Bellaterra (Spain); Univ. Federal do Pará, Belém, Pará (Brazil)
- West Virginia Univ., Morgantown, WV (United States); Benemérita Univ. Autónoma de Puebla, Puebla (Mexico)
- Yachay Tech Univ., Urcuqu (Ecuador)
- Technische Univ. Berlin (Germany)
- Univ. of California, Santa Barbara, CA (United States)
- Inst. de Ciència de Materials de Barcelona-CSIC, Bellaterra (Spain); Inst. Catalana de Recerca i Estudis Avançats (ICREA), Barcelona (Spain)
In this work, we investigate the hydrostatic pressure dependence of the zone center optical phonons of -plane and -plane wurtzite InN epilayers grown on GaN substrates. The longitudinal to transverse mode splitting for the and modes was found to increase with increasing pressure, whereas the associated transverse effective charge decreases for both modes as and (in units of elementary charge and in GPa). These observations are well in line with results for other II–VI, III–V, and group-IV semiconductor compounds as far as the relation between the magnitude and sign of the pressure derivative of and the bond ionicity is concerned. As the latter increases so does with a sign change from positive to negative for bond ionicities around for compounds with anions belonging to the first row of the Periodic Table. A comparison of the results for InN and other nine tetrahedrally bonded compounds indicate that the pressure behavior of the transverse effective charge is mainly determined by the strength of the Pauli repulsion between cation valence electrons and those of the anion core. We also perform ab initio calculations in order to address the origin of the observed increase in linewidth of the mode which is found to arise from a pressure-induced increase in the rate of two-phonon decay processes. In conclusion, this broadening is associated with tuning into resonance of a steep edge in the two-phonon density of states around 460 with the frequency of the mode.
- Research Organization:
- West Virginia Univ., Morgantown, WV (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); Spanish Ministerio de Economía, Industria y Competitividad; US Air Force Office of Scientific Research (AFOSR); US Department of the Navy, Office of Naval Research (ONR)
- Grant/Contract Number:
- SC0016176; SEV-2015-0496; OCI-1053575; MAT2015-70850-P; CSD2010-00044; MAT2017-90024-P; DMREF-NSF-1434897
- OSTI ID:
- 1593996
- Alternate ID(s):
- OSTI ID: 1478561
- Journal Information:
- Physical Review B, Vol. 98, Issue 16; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Effects of temperature and pressure on the optical and vibrational properties of thermoelectric SnSe
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journal | January 2019 |
Photocurrent measurements of InGaN/GaN quantum wells under hydrostatic and uniaxial pressure
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journal | March 2019 |
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