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Title: A new defect chemistry model for Nb-doped SrCoO2.5+δ: The role of oxygen interstitials and delocalized-to-localized electron holes

Journal Article · · Journal of Solid State Chemistry
 [1];  [1];  [1]
  1. University of South Carolina, Columbia, SC (United States)

Here a new defect chemistry model featuring oxygen interstitials ( O"I) and delocalized-to-localized d-electron holes (Co'Co 2.5 reference framework to elucidate transport properties of Nb-doped SrCoO2.5+δ (SCN) system over a range of partial pressure of oxygen (Po2) and temperature (T). With this new defect chemistry model, the electronic conductivity behaviors with T and Po2 can be well interpreted by the change in concentration of d-electron holes migrating with a constant mobility. The important concentration contours of electron holes, excess electrons and oxygen interstitials are mapped out on the T-Po2 domain, from which hole-concentration and conductivity under iso-stoichiometry are reconstructed. The partial/integral molar thermodynamic properties and thermodynamic factor of the SCN solid solution are also determined. A transitional delocalized-to-localized hole-transport mechanism with decreasing oxygen stoichiometry is discussed based on p=p(T) obtained under constant oxygen stoichiometry.

Research Organization:
Univ. of South Carolina, Columbia, SC (United States)
Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Grant/Contract Number:
AR0000492
OSTI ID:
1534064
Alternate ID(s):
OSTI ID: 1396849
Journal Information:
Journal of Solid State Chemistry, Vol. 246, Issue C; ISSN 0022-4596
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 13 works
Citation information provided by
Web of Science

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