Calcium as a nonradiative recombination center in InGaN

Journal Article · Fri Jan 13 00:00:00 EST 2017 · Applied Physics Express

DOI:https://doi.org/10.7567/APEX.10.021001· OSTI ID:1524176

Shen, Jimmy-Xuan ^[1]; Wickramaratne, Darshana ^[2]; Dreyer, Cyrus E. ^[3]; Alkauskas, Audrius ^[4]; Young, Erin ^[2]; Speck, James S. ^[2]; Van de Walle, Chris G. ^[2]

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1. Univ. of California, Santa Barbara, CA (United States). Dept. of Physics
2. Univ. of California, Santa Barbara, CA (United States). Dept. of Materials
3. Rutgers Univ., Piscataway, NJ (United States). Dept. of Physics and Astronomy
4. Center for Physical Sciences and Technology (Lithuania)

Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level ~1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017 cm^-3, the Shockley–Read–Hall recombination coefficient, A, of InGaN exceeds 106 s^-1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: SC0010689; AC02- 05CH11231
• OSTI ID: 1524176
• Journal Information: Applied Physics Express, Vol. 10, Issue 2; ISSN 1882-0778
• Publisher: Japan Society of Applied Physics
• Country of Publication: United States
• Language: English