Creation and Ordering of Oxygen Vacancies at WO3-d and Perovskite Interfaces
Changes in structure and composition resulting from oxygen deficiency can strongly impact the physical and chemical properties of transition metal oxides, which may lead to new functionalities for novel electronic devices. Oxygen vacancies (Vo) can be readily formed to accomodate the lattice mismatch during epitixial thin film growth. In this paper, the effects of substrate strain and oxidizing power on the creation and distribution of Vo in WO3 thin films are investigated in detail. An 18O2 isotope labeled time-of-flight secondary ion mass spectrometry study reveals that WO3- films grown on SrTiO3 substrates display a significantly larger oxygen vacancy gradient along the growth direction compared to those grown on LaAlO3 substrates. This result is corroborated by scanning transmission electron microscopy imaging which reveals a large number of defects close to the interface to accommodate interfacial tensile strain, leading to the ordering of Vo and the formation of semi-aligned Magnéli phases. The strain is gradually released and tetragonal phase with much better crystallinity is observed at the film/vacuum interface. The changes in structure resulting from oxygen defect creation are shown to have a direct impact on the electronic and optical properties of the films.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1514263
- Report Number(s):
- PNNL-SA-132665
- Journal Information:
- ACS Applied Materials & Interfaces, Vol. 10, Issue 20
- Country of Publication:
- United States
- Language:
- English
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