A method for repairing amplitude defects in multilayer-coated EUV mask blanks
EUV mask blanks are fabricated by depositing a reflective Mo/Si multilayer film onto super-polished substrates. Localized defects in this thin film coating can significantly perturb the reflected field and produce errors in the printed image. Ideally one would want to manufacture defect-free mask blanks; however, this may be very difficult to achieve in practice. One practical way to increase the yield of mask blanks is to be able to repair a significant number of the defects in the multilayer coating. In this paper we present a method for repairing defects that are near the top surface of the coating; we call these amplitude defects because they predominantly attenuate the amplitude of the reflected field. Although the discussion is targeted to the application of manufacturing masks for EUV lithography, the conclusions and results are also applicable to understanding the optical effects of multilayer erosion, including ion-induced multilayer erosion and condenser erosion in EUVL steppers.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 15015133
- Report Number(s):
- UCRL-JRNL-200816; APOPAI; TRN: US200509%%42
- Journal Information:
- Applied Optics, Vol. 43, Issue 36; Other Information: Journal publication date August 12, 2005; PDF-FILE: 40 ; SIZE: 2.7 MBYTES; PBD: 20 Oct 2003; ISSN 0003-6935
- Country of Publication:
- United States
- Language:
- English
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