Damage Evolution and Recovery on both Si and C Sublattices in Al-implanted 4H-SiC Studied by Rutherford Backscattering Spectroscopy and Nuclear Reaction Analysis
Damage evolution in 4H-SiC epitaxial layers irradiated with 1.1 MeV Al molecular ions at 150 K to ion fluences from 0.15 to 2.25 Al/nm and subsequent damage recovery following isochronal annealing at temperatures up to 870 K were studied by Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA). Using a 0.94 MeV D beam in channeling geometry, disorder on both the Si and C sublattices was characterized simultaneously by measuring scattering/reaction yields from RBS combined with 12C(d,p)13C NRA analysis. The relative disorder on the as-implanted sublattices follows a sigmoidal dependence on ion fluence and the relative disorder on the C sublattice is higher than that on the Si sublattice at low ion fluences. Isochronal recovery on both the Si and C sublattices exhibits similar nonlinear dependence on annealing temperature, with several step-like recovery regimes that are associated with different recovery processes.
- Research Organization:
- Pacific Northwest National Lab., Richland, WA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC06-76RL01830
- OSTI ID:
- 15001579
- Report Number(s):
- PNNL-SA-34878; JAPIAU; KC0201020; TRN: US200419%%53
- Journal Information:
- Journal of Applied Physics, Vol. 91, Issue 10; Other Information: PBD: 15 May 2002; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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