Silicon Oxide‐Rich Diamond‐Like Carbon: A Conformal, Ultrasmooth Thin Film Material with High Thermo‐Oxidative Stability

Mangolini, Filippo; McClimon, J. Brandon; Segersten, Justin; Hilbert, James; Heaney, Patrick; Lukes, Jennifer R.; Carpick, Robert W.

doi:10.1002/admi.201801416

Title: Silicon Oxide‐Rich Diamond‐Like Carbon: A Conformal, Ultrasmooth Thin Film Material with High Thermo‐Oxidative Stability

Journal Article · Wed Nov 28 00:00:00 EST 2018 · Advanced Materials Interfaces

DOI:https://doi.org/10.1002/admi.201801416· OSTI ID:1483734

^[1]; McClimon, J. Brandon ^[2]; Segersten, Justin ^[3]; Hilbert, James ^[4]; Heaney, Patrick ^[3]; Lukes, Jennifer R. ^[4]; Carpick, Robert W. ^[4]

Materials Science and Engineering Program and Department of Mechanical Engineering The University of Texas at Austin Austin TX 78712 USA
Department of Materials Science and Engineering University of Pennsylvania Philadelphia PA 19104 USA
NCD Technologies LLC Madison WI 53719 USA
Department of Mechanical Engineering and Applied Mechanics University of Pennsylvania Philadelphia PA 19104 USA

Abstract Silicon oxide‐containing diamond‐like carbon (a‐C:H:Si:O) films are a promising class of protective coatings for environmentally‐demanding applications owing to their lower residual stresses and superior thermal stability and oxidation resistance relative to undoped diamond‐like carbon. However, existing versions of a‐C:H:Si:O deposited by traditional methods such as plasma‐enhanced chemical vapor deposition (PECVD) undergo substantial degradation and oxidation at temperatures above 250 °C. This, together with the difficulty of PECVD in depositing conformal coatings on complex geometries such as high‐aspect‐ratio features, has limited the applicability of a‐C:H:Si:O. Here, the unique capabilities of plasma immersion ion implantation and deposition (PIIID) to grow silicon oxide‐rich diamond‐like carbon materials that are ultrasmooth, continuous, and conformal on high‐aspect‐ratio topographies are explored. The high concentration of silicon and oxygen in PIIID‐grown films (23 ± 5 at.% and 11 ± 4 at.%, respectively) is unrivalled for this class of materials, and drastically increases the resistance to oxidation at high temperatures, compared with PECVD‐grown films. The results open the path for using a‐C:H:Si:O in applications involving exposure of materials to extreme environments.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐AC02‐98CH10886

OSTI ID:: 1483734

Journal Information:: Advanced Materials Interfaces, Journal Name: Advanced Materials Interfaces Vol. 6 Journal Issue: 2; ISSN 2196-7350

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Cited by: 11 works

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