Photo-induced enhancement of the dark conductivity in nanocrystalline germanium/amorphous silicon composite thin films

Nangoi, J. K.; Bodurtha, K.; Kakalios, J.

doi:10.1063/1.5031434

Title: Photo-induced enhancement of the dark conductivity in nanocrystalline germanium/amorphous silicon composite thin films

Journal Article · Thu Oct 18 00:00:00 EDT 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5031434· OSTI ID:1478134

Nangoi, J. K.; Bodurtha, K.; Kakalios, J.

A light-induced increase in the dark conductivity is observed in composite thin films consisting of hydrogenated amorphous silicon (a-Si:H) containing nanocrystalline germanium (nc-Ge) inclusions, synthesized by co-deposition in a dual-chamber plasma enhanced chemical vapor deposition system. Unlike the Staebler-Wronski effect or persistent photoconductivity observed in amorphous semiconductors, this photo-induced excess conductivity is observed even in composite nc-Ge/a-Si:H films with a minimal photosensitivity. The decay of the excess conductivity follows a single-exponential time dependence, with a temperature independent time constant. We propose that spatial separation of photo-excited charge carriers by the compositional morphology present in the film, with tunneling of photo-excited holes into the germanium nanocrystalline inclusions, is involved in the creation and removal of this effect.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: XEA-9-99012-01

OSTI ID:: 1478134

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Vol. 124 Journal Issue: 16; ISSN 0021-8979

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 1 work

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References (31)

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