Symmetric light emitting devices from poly({ital p}-di ethynylene phenylene) ({ital p}-di phenylene vinylene) derivatives
- Department of Physics, University of Utah, Salt Lake City, Utah 84112 (United States)
- Ames Laboratory-USDOE and Department of Physics, Iowa State University, Ames, Iowa 50011 (United States)
- Ames Laboratory-USDOE and Department of Chemistry, Iowa State University, Ames, Iowa 50011 (United States)
Light emitting devices were fabricated from 2,5-dialkoxy derivatives of poly({ital p}-di ethynylene phenylene-{ital p}-di phenylene vinylene) (PDEPDPV) sandwiched between indium tin oxide (ITO) and Al. The current--voltage ({ital I}--{ital V}) curve, electroluminescence (EL) intensity-voltage ({ital I}{sub EL}--{ital V}) curve, and the EL spectra were identical in forward and reverse bias. The {ital I}--{ital V} curves were also symmetric under illumination, with {ital I}{approx}0 and {ital V}=0, suggesting a negligibly small internal electric field. At high bias voltage, carrier injection was found to be dominated by tunneling at the interfaces. At low bias voltage, tunneling among localized states at the Fermi level prevailed. The behavior is discussed in relation to Fermi-level pinning at defect states in the interfaces with the ITO and Al. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- Research Organization:
- Ames National Laboratory
- DOE Contract Number:
- W-7405-ENG-82
- OSTI ID:
- 147754
- Journal Information:
- Applied Physics Letters, Vol. 67, Issue 26; Other Information: PBD: 25 Dec 1995
- Country of Publication:
- United States
- Language:
- English
Similar Records
Synthesis and electroluminescence study of a novel copolymer: Poly(phenylene vinylene-co-quinoline vinylene)
Photoresponse of poly([ital para]-phenylenevinylene) light-emitting diodes