Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

Nami, Mohsen; Stricklin, Isaac E.; DaVico, Kenneth M.; Mishkat-Ul-Masabih, Saadat; Rishinaramangalam, Ashwin K.; Brueck, S. R.  J.; Brener, Igal; Feezell, Daniel F.

doi:10.1038/s41598-017-18833-6

Title: Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

Journal Article · Thu Jan 11 00:00:00 EST 2018 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-017-18833-6· OSTI ID:1472261

Nami, Mohsen ^[1]; Stricklin, Isaac E. ^[1]; DaVico, Kenneth M. ^[1]; Mishkat-Ul-Masabih, Saadat ^[1]; Rishinaramangalam, Ashwin K. ^[1]; Brueck, S. R. J. ^[1]; Brener, Igal ^[2]; Feezell, Daniel F. ^[1]

Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials
Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies

In this work, we demonstrate high-performance electrically injected GaN/InGaN core-shell nanowire-based LEDs grown using selective-area epitaxy and characterize their electro-optical properties. To assess the quality of the quantum wells, we measure the internal quantum efficiency (IQE) using conventional low temperature/room temperature integrated photoluminescence. The quantum wells show a peak IQE of 62%, which is among the highest reported values for nanostructure-based LEDs. Time-resolved photoluminescence (TRPL) is also used to study the carrier dynamics and response times of the LEDs. TRPL measurements yield carrier lifetimes in the range of 1–2 ns at high excitation powers. To examine the electrical performance of the LEDs, current density–voltage (J-V) and light-current density-voltage (L-J-V) characteristics are measured. We also estimate the peak external quantum efficiency (EQE) to be 8.3% from a single side of the chip with no packaging. The LEDs have a turn-on voltage of 2.9 V and low series resistance. Based on FDTD simulations, the LEDs exhibit a relatively directional far-field emission pattern in the range of ±15°. This work demonstrates that it is feasible for electrically injected nanowire-based LEDs to achieve the performance levels needed for a variety of optical device applications.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of New Mexico, Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC); Defense Advanced Research Projects Agency (DARPA) (United States)

Grant/Contract Number:: NA0003525; D13AP00055

OSTI ID:: 1472261

Report Number(s):: SAND-2018-9661J; 667568

Journal Information:: Scientific Reports, Vol. 8; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 57 works

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Fabrication and Characterization of Multiquantum Shell Light‐Emitting Diodes with Tunnel Junction Murakami, Hideki; Suzuki, Atsushi; Nokimura, Kyohei physica status solidi (a), Vol. 217, Issue 7 https://doi.org/10.1002/pssa.201900774	journal	January 2020
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Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes Robin, Y.; Bae, S. Y.; Shubina, T. V. Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-25473-x	journal	May 2018
Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods Schmidt, Gordon; Müller, Marcus; Veit, Peter Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-34382-y	journal	October 2018
Electronic and optical properties of GaN/AlN core–shell nanowires Zheng, Jiangshan; Li, Enling; Yan, Jie Modern Physics Letters B, Vol. 34, Issue 02 https://doi.org/10.1142/s0217984920500219	journal	December 2019
Mask-less MOVPE of arrayed n-GaN nanowires on site- and polarity-controlled AlN/Si templates Blumberg, C.; Wefers, F.; Tegude, F. -J. CrystEngComm, Vol. 21, Issue 48 https://doi.org/10.1039/c9ce01151j	journal	January 2019
Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires Lu, Weifang; Sone, Naoki; Goto, Nanami Nanoscale, Vol. 11, Issue 40 https://doi.org/10.1039/c9nr07271c	journal	January 2019
Femtosecond Pump Probe Reflectivity Spectra in CdTe and GaAs Crystals at Room Temperature Sun, Hao; Ma, Hong; Leng, Jiancai Materials, Vol. 13, Issue 1 https://doi.org/10.3390/ma13010242	journal	January 2020
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Ultrafast carrier dynamics of conformally grown semi-polar (112̄2) GaN/InGaN multiple quantum well co-axial nanowires on m-axial GaN core nanowires Johar, Muhammad Ali; Song, Hyun-Gyu; Waseem, Aadil Nanoscale, Vol. 11, Issue 22 https://doi.org/10.1039/c9nr02823d	journal	January 2019

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