Enhancement of Hall mobility in coupled {delta}-doped layers grown by molecular-beam epitaxy
- Univ. of California, Los Angeles, CA (United States); and others
When two or more highly doped, thin ({open_quotes}delta{close_quotes} doped) layers are placed in close proximity to one another, it is found that an enhancement of the Hall mobility occurs over that of a single delta layer as well as that of the bulk case. In Si, Hall hole mobilities of up to 2400 cm{sup 2}V{sup {minus}1}s{sup {minus}1} at 77 K have been obtained with {delta} layers spaced 200 {Angstrom} apart compared to a mobility of 280 cm{sup 2}V{sup {minus}1}s{sup {minus}1} for the single delta layer. The conductance of the coupled {delta}-doped well exceeds that of comparable uniformly doped bulk layers, especially at lower temperatures. It is also found that when two Si {delta}-doped wells in GaAs are placed in close proximity to one another, the electron Hall mobility is enhanced two to five times over that of the single well case. These types of structures show great promise in obtaining high mobilities with high carrier densities for semiconductors grown by simple homoepitaxy. 12 refs., 4 figs.
- OSTI ID:
- 147034
- Report Number(s):
- CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0042
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
- Country of Publication:
- United States
- Language:
- English
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