Nature and origin of residual impurities in high-purity GaAs and InP grown by chemical beam epitaxy

Journal Article · Sat May 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586759· OSTI ID:147020

Roth, A P; Sudersena Rao, T; Benzaquen, R ^[1]

---

1. Inst. for Microstructural Sciences, Ottawa (Canada); and others

In this article, we present the results of a systematic study of residual impurities in unintentionally doped GaAs and InP grown by chemical beam epitaxy. They are characterized using optical measurements and secondary-ion mass spectrometry which provide both the concentration and the chemical nature of the impurities. We have found that the residual carrier concentration in GaAs depends strongly on the arsine cracker cell temperature and that dominant n-type impurities such as sulfur and selenium originate from arsine. In contrast, InP is much less sensitive to the phosphine cracker cell temperature and the concentration of carbon is greatly reduced compared to GaAs. 11 refs., 4 figs., 1 tab.

• OSTI ID: 147020
• Report Number(s): CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0028
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
PHOTOLUMINESCENCE
GALLIUM ARSENIDES
IMPURITIES
EPITAXY
CHEMICAL SHIFT