Migration-enhanced epitaxial growth of GaAs on Si using (GaAs){sub 1-x}Si{sub 2}{sub x}/GaAs strained-layer superlattice buffer layers
- NTT Basic Research Lab., Tokyo (Japan)
(GaAs){sub 1-x}(Si{sub 2}){sub x}/GaAs strainedl-layer superlattices (SLS) have been used as buffer layers to reduce the dislocation density in GaAs grown on Si by migration-enhanced epitaxy. The cross-sectional transmission electron microscopy (TEM) investigations revealed extensive threading dislocation bending at each interface of (GaAs){sub 1-x}Si{sub 2}{sub x} and GaAs, making the SLS high efficient. The observed highly effective dislocation bending, it is believed that due to a combined effect of built-in strain in the SLS and the relatively high elastic stiffness constant of (GaAs){sub 1-x}(Si{sub 2}){sub x} alloys. Plan-view TEM studies indicated dislocation densities <10{sup 6} cm{sup {minus}2} at a distance of 0.2 {mu}M from the surface of GaAs on Si. 17 refs., 3 figs.
- OSTI ID:
- 147015
- Report Number(s):
- CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0023
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
- Country of Publication:
- United States
- Language:
- English
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