Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx

Liu, Henan; Zhang, Yong; Steenbergen, Elizabeth H.; Liu, Shi; Lin, Zhiyuan; Zhang, Yong-Hang; Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch; Dupuis, Russell D.; Kim, Jin K.; Hawkins, Samuel D.; Klem, John F.

doi:10.1103/PhysRevApplied.8.034028

Title: Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice $InAs / {InAs}_{1 - x} {Sb}_{x}$

Journal Article · Tue Sep 26 00:00:00 EDT 2017 · Physical Review Applied

DOI:https://doi.org/10.1103/PhysRevApplied.8.034028· OSTI ID:1467461

Liu, Henan ^[1]; Zhang, Yong ^[1]; Steenbergen, Elizabeth H. ^[2]; Liu, Shi ^[2]; Lin, Zhiyuan ^[2]; Zhang, Yong-Hang ^[2]; Kim, Jeomoh ^[3]; Ji, Mi-Hee ^[3]; Detchprohm, Theeradetch ^[3]; Dupuis, Russell D. ^[3]; Kim, Jin K. ^[4]; Hawkins, Samuel D. ^[4]; Klem, John F. ^[4]

Univ. of North Carolina, Charlotte, NC (United States). Optical Science and Engineering Graduate Program and Dept. of Electrical and Computer Engineering
Arizona State Univ., Tempe, AZ (United States). Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering
Georgia Inst. of Technology, Atlanta, GA (United States). Center for Compound Semiconductors and School of Electrical and Computer Engineering
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The InAs/InAs_1-x Sb_x superlattice system distinctly differs from two well-studied superlattice systems GaAs/AlAs and InAs/GaSb in terms of electronic band alignment, common elements at the interface, and phonon spectrum overlapping of the constituents. This fact leads to the unique electronic and vibrational properties of the InAs/InAs_1-xSb_x system when compared to the other two systems. Here in this work, we report a polarized Raman study of the vibrational properties of the InAs/InAs_1-x Sb_x superlattices (SLs) as well as selected InAs_1-xSb_x alloys, all grown on GaSb substrates by either MBE or metalorganic chemical vapor deposition (MOCVD) from both the growth surface and cleaved edge. In the SL, from the (001) backscattering geometry, an InAs-like longitudinal optical (LO) mode is observed as the primary feature, and its intensity is found to increase with increasing Sb composition. From the (110) cleaved-edge backscattering geometry, an InAs-like transverse optical (TO) mode is observed as the main feature in two cross-polarization configurations, but an additional InAs-like “forbidden” LO mode is observed in two parallel-polarization configurations. The InAs_1-xSb_x alloys lattice matched to the substrate ( x_Sb ~ 0.09) grown by MBE are also found to exhibit the forbidden LO mode, implying the existence of some unexpected [001] modulation. However, the strained samples (x_Sb~ 0.35) grown by MOCVD are found to behave like a disordered alloy. The primary conclusions are (1) the InAs-like LO or TO mode can be either a confined or quasiconfined mode in the InAs layers of the SL or extended mode of the whole structure depending on the Sb composition. (2) InAs/InAs_1-xSb_x and InAs/GaSb SLs exhibit significantly different behaviors in the cleaved-edge geometry but qualitatively similar in the (001) geometry. (3) The appearance of the forbidden LO-like mode is a universal signature for SLs and bulk systems resulting from the mixing of phonon modes due to structural modulation or symmetry reduction.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); US Army Research Office (ARO)

Grant/Contract Number:: AC04-94AL85000; W911NF-10-1-0524; NA0003525

OSTI ID:: 1467461

Alternate ID(s):: OSTI ID: 1394874

Report Number(s):: SAND-2017-10149J; PRAHB2; 657091

Journal Information:: Physical Review Applied, Vol. 8, Issue 3; ISSN 2331-7019

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 6 works

Citation information provided by
Web of Science

References (44)

Auger lifetime enhancement in InAs–Ga _{1− x} In _x Sb superlattices Youngdale, E. R.; Meyer, J. R.; Hoffman, C. A. Applied Physics Letters, Vol. 64, Issue 23 https://doi.org/10.1063/1.111325	journal	June 1994
Structural studies of natural superlattices in group III-V alloy epitaxial layers Norman, A. G.; Seong, T. -Y; Ferguson, I. T. Semiconductor Science and Technology, Vol. 8, Issue 1S https://doi.org/10.1088/0268-1242/8/1S/003	journal	January 1993
High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices Manurkar, Paritosh; Ramezani-Darvish, Shaban; Nguyen, Binh-Minh Applied Physics Letters, Vol. 97, Issue 19 https://doi.org/10.1063/1.3514244	journal	November 2010
Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization Svensson, S. P.; Donetsky, D.; Wang, D. Journal of Crystal Growth, Vol. 334, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.08.030	journal	November 2011
Lattice vibration modes in type-II superlattice InAs/GaSb with no-common-atom interface and overlapping vibration spectra Liu, Henan; Yue, Naili; Zhang, Yong Physical Review B, Vol. 91, Issue 23 https://doi.org/10.1103/PhysRevB.91.235317	journal	June 2015
Passivation techniques for InAs/GaSb strained layer superlattice detectors: Passivation Techniques for InAs/GaSb SLS detectors Plis, Elena A.; Kutty, Maya Narayanan; Krishna, Sanjay Laser & Photonics Reviews, Vol. 7, Issue 1 https://doi.org/10.1002/lpor.201100029	journal	March 2012
Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices Höglund, L.; Ting, D. Z.; Khoshakhlagh, A. Applied Physics Letters, Vol. 103, Issue 22 https://doi.org/10.1063/1.4835055	journal	November 2013
Electric-field-induced Raman scattering: Resonance, temperature, and screening effects Schäffler, F.; Abstreiter, G. Physical Review B, Vol. 34, Issue 6 https://doi.org/10.1103/PhysRevB.34.4017	journal	September 1986
Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices Aytac, Y.; Olson, B. V.; Kim, J. K. Journal of Applied Physics, Vol. 119, Issue 21 https://doi.org/10.1063/1.4953386	journal	June 2016
Phonons in GaAs-AlxGa1−xAs superlattices Menéndez, José Journal of Luminescence, Vol. 44, Issue 4-6 https://doi.org/10.1016/0022-2313(89)90064-1	journal	December 1989
Resonance Raman scattering studies of composition-modulated GaP/InP short-period superlattices Cheong, Hyeonsik M.; Zhang, Yong; Norman, A. G. Physical Review B, Vol. 60, Issue 7 https://doi.org/10.1103/PhysRevB.60.4883	journal	August 1999
Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors Zuo, Daniel; Liu, Runyu; Wasserman, Daniel Applied Physics Letters, Vol. 106, Issue 7 https://doi.org/10.1063/1.4913312	journal	February 2015
Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices Kim, H. S.; Cellek, O. O.; Lin, Zhi-Yuan Applied Physics Letters, Vol. 101, Issue 16 https://doi.org/10.1063/1.4760260	journal	October 2012
Vertical Hole Transport and Carrier Localization in $InAs / {InAs}_{1 - x} {Sb}_{x}$ Type-II Superlattice Heterojunction Bipolar Transistors Olson, B. V.; Klem, J. F.; Kadlec, E. A. Physical Review Applied, Vol. 7, Issue 2 https://doi.org/10.1103/PhysRevApplied.7.024016	journal	February 2017
Raman scattering in GaSb‐AlSb strained layer superlattices Jusserand, B.; Voisin, P.; Voos, M. Applied Physics Letters, Vol. 46, Issue 7 https://doi.org/10.1063/1.95527	journal	April 1985
Calculated superlattice and interface phonons of InAs/GaSb superlattices Fasolino, A.; Molinari, E.; Maan, J. C. Physical Review B, Vol. 33, Issue 12 https://doi.org/10.1103/PhysRevB.33.8889	journal	June 1986
The best thermoelectric. Mahan, G. D.; Sofo, J. O. Proceedings of the National Academy of Sciences, Vol. 93, Issue 15 https://doi.org/10.1073/pnas.93.15.7436	journal	July 1996
Monolayer-by-monolayer compositional analysis of InAs/InAsSb superlattices with cross-sectional STM Wood, M. R.; Kanedy, K.; Lopez, F. Journal of Crystal Growth, Vol. 425 https://doi.org/10.1016/j.jcrysgro.2015.02.063	journal	September 2015
Low operating bias InAs/GaSb strain layer superlattice LWIR detector Baril, Neil; Bandara, Sumith; Hoeglund, Linda Infrared Physics & Technology, Vol. 70 https://doi.org/10.1016/j.infrared.2014.10.013	journal	May 2015
Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement Chen, G.; Hoang, A. M.; Bogdanov, S. Applied Physics Letters, Vol. 103, Issue 3 https://doi.org/10.1063/1.4813479	journal	July 2013
The Raman effect in crystals Loudon, R. Advances in Physics, Vol. 13, Issue 52 https://doi.org/10.1080/00018736400101051	journal	October 1964
Lattice dynamics and Raman scattering by phonons of GaAs/AlAs(001) superlattices Berdekas, D.; Ves, S. Journal of Physics: Condensed Matter, Vol. 21, Issue 27 https://doi.org/10.1088/0953-8984/21/27/275405	journal	June 2009
Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Steenbergen, E. H.; Connelly, B. C.; Metcalfe, G. D. Applied Physics Letters, Vol. 99, Issue 25 https://doi.org/10.1063/1.3671398	journal	December 2011
Raman scattering in InAs _1-x Sb _x alloys grown on GaAs by molecular beam epitaxy Li, Y. B.; Dosanjh, S. S.; Ferguson, I. T. Semiconductor Science and Technology, Vol. 7, Issue 4 https://doi.org/10.1088/0268-1242/7/4/022	journal	April 1992
Selection rules and dispersion of GaAs/AlAs multiple-quantum-well optical phonons studied by Raman scattering in right-angle, forward, and backscattering in-plane geometries Fainstein, A.; Etchegoin, P.; Chamberlain, M. P. Physical Review B, Vol. 51, Issue 20 https://doi.org/10.1103/PhysRevB.51.14448	journal	May 1995
Strain-balanced InAs/InAs _1−x Sb _x type-II superlattices grown by molecular beam epitaxy on GaSb substrates Steenbergen, Elizabeth H.; Nunna, Kalyan; Ouyang, Lu Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 30, Issue 2 https://doi.org/10.1116/1.3672028	journal	March 2012
All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices Olson, B. V.; Murray, L. M.; Prineas, J. P. Applied Physics Letters, Vol. 102, Issue 20 https://doi.org/10.1063/1.4807433	journal	May 2013
Raman scattering from Ge _x Si _{1− x} /Si strained‐layer superlattices Cerdeira, F.; Pinczuk, A.; Bean, J. C. Applied Physics Letters, Vol. 45, Issue 10 https://doi.org/10.1063/1.95014	journal	November 1984
Interface-phonon dispersion and confined-optical-mode selection rules of GaAs/AlAs superlattices studied by micro-Raman spectroscopy Hessmer, R.; Huber, A.; Egeler, T. Physical Review B, Vol. 46, Issue 7 https://doi.org/10.1103/PhysRevB.46.4071	journal	August 1992
Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAs _y Sb _{1− y} molecular‐beam epitaxial layers Seong, Tae‐Yeon; Norman, A. G.; Ferguson, I. T. Journal of Applied Physics, Vol. 73, Issue 12 https://doi.org/10.1063/1.353440	journal	June 1993
Resonant quasiconfined optical phonons in semiconductor superlattices Fasolino, A.; Molinari, E.; Maan, J. C. Physical Review B, Vol. 39, Issue 6 https://doi.org/10.1103/PhysRevB.39.3923	journal	February 1989
Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes Grein, C. H.; Young, P. M.; Flatté, M. E. Journal of Applied Physics, Vol. 78, Issue 12 https://doi.org/10.1063/1.360422	journal	December 1995
Raman scattering in InAs _{1− x} Sb _x grown by organometallic vapor phase epitaxy Cherng, Y. T.; Ma, K. Y.; Stringfellow, G. B. Applied Physics Letters, Vol. 53, Issue 10 https://doi.org/10.1063/1.100104	journal	September 1988
Proposal for strained type II superlattice infrared detectors Smith, D. L.; Mailhiot, C. Journal of Applied Physics, Vol. 62, Issue 6 https://doi.org/10.1063/1.339468	journal	September 1987
Detection of excess crystalline As and Sb in III‐V oxide interfaces by Raman scattering Farrow, Roger L.; Chang, Richard K.; Mroczkowski, Stanley Applied Physics Letters, Vol. 31, Issue 11 https://doi.org/10.1063/1.89542	journal	December 1977
Fundamentals of Semiconductors Yu, Peter Y.; Cardona, Manuel Graduate Texts in Physics https://doi.org/10.1007/978-3-642-00710-1	book	January 2010
Growth and characterization of InAs/InAsSb superlattices by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors Ning, Zhen-Dong; Liu, Shu-Man; Luo, Shuai Materials Letters, Vol. 164 https://doi.org/10.1016/j.matlet.2015.10.140	journal	February 2016
Dark current reduction in InAs/InAsSb superlattice mid-wave infrared detectors through restoration etch Myers, S.; Ramirez, D. A.; Schuler-Sandy, T. Electronics Letters, Vol. 51, Issue 24 https://doi.org/10.1049/el.2015.2073	journal	November 2015
Structural and optical characterization of type-II InAs/InAs _1−x Sb _x superlattices grown by metalorganic chemical vapor deposition Steenbergen, E. H.; Huang, Y.; Ryou, J. -H. Applied Physics Letters, Vol. 99, Issue 7 https://doi.org/10.1063/1.3625429	journal	August 2011
Resonance Raman Scattering by Confined LO and TO Phonons in GaAs-AlAs Superlattices Sood, A. K.; Menéndez, J.; Cardona, M. Physical Review Letters, Vol. 54, Issue 19 https://doi.org/10.1103/PhysRevLett.54.2111	journal	May 1985
Strain in coherent-wave SiGe/Si superlattices Shin, H. K.; Lockwood, D. J.; Baribeau, J. -M. Solid State Communications, Vol. 114, Issue 10 https://doi.org/10.1016/S0038-1098(00)00111-3	journal	May 2000
“Quantum Coaxial Cables” for Solar Energy Harvesting Zhang, Yong; Mascarenhas, Angelo Nano Letters, Vol. 7, Issue 5 https://doi.org/10.1021/nl070174f	journal	May 2007
Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in $InAs / In (As, Sb)$ Type-II Superlattices Aytac, Y.; Olson, B. V.; Kim, J. K. Physical Review Applied, Vol. 5, Issue 5 https://doi.org/10.1103/PhysRevApplied.5.054016	journal	May 2016
Phonon confinement in InAs/GaSb superlattices Berdekas, D.; Kanellis, G. Physical Review B, Vol. 43, Issue 12 https://doi.org/10.1103/PhysRevB.43.9976	journal	April 1991

Similar Records

Ordering and bandgap reduction in InAs{sub 1{minus}x}Sb{sub x} alloys

Conference · Wed Feb 01 00:00:00 EST 1995 · OSTI ID:1467461

Follstaedt, D M; Biefeld, R M; Kurtz, S R; +2 more

Raman scattering study of InAs/GaInSb strained layer superlattices

Journal Article · Fri Nov 15 00:00:00 EST 1991 · Journal of Applied Physics; (United States) · OSTI ID:1467461

Sela, I; Campbell, I H; Laurich, B K; +5 more

A structural investigation of compositionally graded InAs/sub x/Sb/sub 1-x/ buffer layers

Conference · Fri Jan 01 00:00:00 EST 1988 · OSTI ID:1467461

Biefeld, R M

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY

Title: Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs / InAs 1 - x Sb x

Citation Formats

References (44)

Similar Records

Related Subjects

Title: Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice $InAs / {InAs}_{1 - x} {Sb}_{x}$