skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: An improved method for determining carrier densities via drive level capacitance profiling

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4983367· OSTI ID:1466216

In this paper, we demonstrate that an analytic relationship between coefficients in the Taylor expansion of the junction capacitance can be exploited to yield more precise determinations of carrier densities in drive level capacitance profiling (DLCP). Improvements are demonstrated on data generated according to the DLCP theory and in measurements performed on a CuInxGa1–xSe2 device. We argue that the improved DLCP method is especially important for non-uniform devices, which are more susceptible to noise in the capacitance data used in DLCP because they require that the amplitude of the drive level be restricted. Importantly, the analysis does not require the collection of any data other than what is typically collected during a DLCP measurement while employing fewer independent parameters than the model that is typically used in DLCP. Finally and thus, we expect that it will be readily adoptable by those who perform DLCP measurements.

Research Organization:
Univ. of Oregon, Eugene, OR (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
Grant/Contract Number:
EE0004946
OSTI ID:
1466216
Alternate ID(s):
OSTI ID: 1361892
Journal Information:
Applied Physics Letters, Vol. 110, Issue 20; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 8 works
Citation information provided by
Web of Science

References (19)

Electronic properties of the Cu 2 ZnSn(Se,S) 4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods journal June 2012
Cu 2 ZnSnSe 4 Thin-Film Solar Cells by Thermal Co-evaporation with 11.6% Efficiency and Improved Minority Carrier Diffusion Length journal December 2014
Composition and bandgap control in Cu(In,Ga)Se 2 -based absorbers formed by reaction of metal precursors : Composition and bandgap control in Cu(In,Ga)Se journal April 2014
Surface State and Interface Effects on the Capacitance‐Voltage Relationship in Schottky Barriers journal August 1969
Capacitance profiling in the CIGS solar cells journal May 2007
Drive‐level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films journal August 1985
Theoretical analysis of effects of deep level, back contact, and absorber thickness on capacitance–voltage profiling of CdTe thin-film solar cells journal May 2012
Benign Solutions and Innovative Sequential Annealing Processes for High Performance Cu 2 ZnSn(Se,S) 4 Photovoltaics journal November 2013
The Comparison of (Ag,Cu)(In,Ga)Se$_{\bf 2}$ and Cu(In,Ga)Se$_{\bf 2}$ Thin Films Deposited by Three-Stage Coevaporation journal January 2014
The determination of carrier mobilities in CIGS photovoltaic devices using high-frequency admittance measurements journal June 2005
The influence of Na on low temperature growth of CIGS thin film solar cells on polyimide substrates journal February 2009
The Role of Sulfur in Solution-Processed Cu 2 ZnSn(S,Se) 4 and its Effect on Defect Properties journal October 2012
Interpretation of admittance, capacitance-voltage, and current-voltage signatures in Cu(In,Ga)Se2 thin film solar cells journal February 2010
Metastable properties of Cu(In1−xGax)Se2 with and without sodium journal February 2011
Optical response of deep defects as revealed by transient photocapacitance and photocurrent spectroscopy in CdTe/CdS solar cells journal October 2014
Correlation between physical, electrical, and optical properties of Cu 2 ZnSnSe 4 based solar cells journal January 2013
Charge and doping distributions by capacitance profiling in Cu(In,Ga)Se2 solar cells journal March 2008
Cu-related recombination in CdS/CdTe solar cells journal February 2008
Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profiling journal February 2004