High Schottky barrier height of the Al/{ital n}-GaAs diodes achieved by sputter deposition
- University of Wisconsin-Madison, Materials Science and Engineering Department, 1509 University Avenue, Madison, Wisconsin 53706 (United States)
- University of Wisconsin-Madison, Chemical Engineering Department, 1415 Johnson Drive, Madison, Wisconsin 53706 (United States)
Thermally stable Al/{ital n}-GaAs Schottky contacts, up to annealing temperature at 500 {degree}C for 20 s, have been realized by sputter deposition. The Schottky barrier height was 0.75 eV (0.9 eV) when using the current-voltage ({ital I}-{ital V}) [capacitance-voltage ({ital C}-{ital V})] method with an ideality factor of 1.09 for the as-deposited samples. The Schottky barrier height increased to 0.97 eV (1.06 eV) with an ideality factor of 1.07 after annealing at 400 {degree}C for 20 s. The discrepancy between {ital I}-{ital V} and {ital C}-{ital V} measurements was attributed to deep levels existing in the GaAs substrate. A (200) dark-field cross-section transmission electron microscopy image of the contact after annealing at 600 {degree}C showed that the (Ga,Al)As phase formed at the interface and the enhancement of the Schottky barrier height was due to the formation of this phase.
- DOE Contract Number:
- FG02-86ER45274
- OSTI ID:
- 144767
- Journal Information:
- Applied Physics Letters, Vol. 64, Issue 11; Other Information: PBD: 14 Mar 1994
- Country of Publication:
- United States
- Language:
- English
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