Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system

Wang, Zhuo; Samaraweera, R. L.; Reichl, C.; Wegscheider, W.; Mani, R. G.

doi:10.1038/srep38516

Title: Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system

Journal Article · Wed Dec 07 00:00:00 EST 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep38516· OSTI ID:1430128

Wang, Zhuo ^[1]; Samaraweera, R. L. ^[1]; Reichl, C. ^[2]; Wegscheider, W. ^[2]; Mani, R. G. ^[1]

Georgia State Univ., Atlanta, GA (United States). Dept. of Physics and Astronomy
Federal Inst. of Technology, Zurich (Switzerland). Lab.fur Festkorperphysik

Electron-heating induced by a tunable, supplementary dc-current (I_dc) helps to vary the observed magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system. The magnetoresistance at B = 0.3 T is shown to progressively change from positive to negative with increasing Idc, yielding negative giant-magnetoresistance at the lowest temperature and highest I_dc. A two-term Drude model successfully fits the data at all Idc and T. The results indicate that carrier heating modifies a conductivity correction σ₁, which undergoes sign reversal from positive to negative with increasing I_dc, and this is responsible for the observed crossover from positive- to negative- magnetoresistance, respectively, at the highest B.

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Research Organization:: Georgia State Univ., Atlanta, GA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0001762

OSTI ID:: 1430128

Journal Information:: Scientific Reports, Vol. 6, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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Title: Tunable electron heating induced giant magnetoresistance in the high mobility GaAs/AlGaAs 2D electron system

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