Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes
- Rensselaer Polytechnic Inst., Troy, NY (United States). Department of Physics, Applied Physics and Astronomy and Department of Electrical, Computer, and Systems Engineering
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- R&D Institute, Samsung LED, Suwon (Korea)
In this work, we model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An+Bn2+Cn3+f(n), where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8×10-29 cm6 s-1. Finally, comparison of the theoretical ABC+f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1426926
- Report Number(s):
- SAND-2010-6136J; 534351
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 13; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 167 works
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