Performance Study of the First 2D Prototype of Vertically Integrated Pattern Recognition Associative Memory (VIPRAM)

Journal Article · Sun Sep 24 00:00:00 EDT 2017 · TBD

OSTI ID:1409837

Deptuch, Gregory ^[1]; Hoff, James ^[1]; Jindariani, Sergo ^[1]; Liu, Tiehui ^[1]; Olsen, Jamieson ^[1]; Tran, Nhan ^[1]; Joshi, Siddhartha ^[2]; Li, Dawei ^[2]; Ogrenci-Memik, Seda ^[2]

---

1. Fermilab
2. Northwestern U.

Extremely fast pattern recognition capabilities are necessary to find and fit billions of tracks at the hardware trigger level produced every second anticipated at high luminosity LHC (HL-LHC) running conditions. Associative Memory (AM) based approaches for fast pattern recognition have been proposed as a potential solution to the tracking trigger. However, at the HL-LHC, there is much less time available and speed performance must be improved over previous systems while maintaining a comparable number of patterns. The Vertically Integrated Pattern Recognition Associative Memory (VIPRAM) Project aims to achieve the target pattern density and performance goal using 3DIC technology. The first step taken in the VIPRAM work was the development of a 2D prototype (protoVIPRAM00) in which the associative memory building blocks were designed to be compatible with the 3D integration. In this paper, we present the results from extensive performance studies of the protoVIPRAM00 chip in both realistic HL-LHC and extreme conditions. Results indicate that the chip operates at the design frequency of 100 MHz with perfect correctness in realistic conditions and conclude that the building blocks are ready for 3D stacking. We also present performance boundary characterization of the chip under extreme conditions.

• Research Organization: Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
• Sponsoring Organization: USDOE Office of Science (SC), High Energy Physics (HEP)
• DOE Contract Number: AC02-07CH11359
• OSTI ID: 1409837
• Report Number(s): FERMILAB-PUB-17-385-CMS-E-PPD; arXiv:1709.08303; 1625289
• Journal Information: TBD, Journal Name: TBD
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS