STM of growth kinetics and strain-related challenges to smooth Si thin film epitaxy.
Conference
·
OSTI ID:1408295
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- LPS
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1408295
- Report Number(s):
- SAND2016-11304D; 648932
- Resource Relation:
- Conference: Proposed for presentation at the ARO Quantum Computing Program Review held July 18-21, 2016 in Alexandria, VA.
- Country of Publication:
- United States
- Language:
- English
Similar Records
In-Situ STM Studies of Strain Stabilized Thin Film Dislocation Networks Under Applied Stress
Epitaxial Oxide Growth in ErH2 Thin Films.
SiGe Growth on Strained Silicon-on-Insulator en route to STM-based Device Fabrication.
Conference
·
Sun Aug 27 00:00:00 EDT 2000
·
OSTI ID:1408295
+2 more
Epitaxial Oxide Growth in ErH2 Thin Films.
Conference
·
Sun Jul 01 00:00:00 EDT 2007
·
OSTI ID:1408295
+1 more
SiGe Growth on Strained Silicon-on-Insulator en route to STM-based Device Fabrication.
Conference
·
Tue Sep 01 00:00:00 EDT 2015
·
OSTI ID:1408295