Electrochemical thinning of silicon

Patent Application · Tue Dec 31 00:00:00 EST 1991

OSTI ID:140379

Medernach, J W

Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• Assignee: Dept. of Energy
• Patent Number(s): PATENTS-US-A7798781
• Application Number: ON: DE94005173; PAN: 7-798,781
• OSTI ID: 140379
• Resource Relation: Other Information: PBD: 1991
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
36 MATERIALS SCIENCE
40 CHEMISTRY
OXYGEN
SPECTROSCOPY
SILICON
QUANTITATIVE CHEMICAL ANALYSIS
ETCHING
SAMPLE PREPARATION
FOURIER TRANSFORM SPECTROMETERS
SEMICONDUCTOR DEVICES
INTEGRATED CIRCUITS
ANODIZATION