Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H–SiC wafers
Journal Article
·
· Journal of Crystal Growth
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-06CH11357; AC02-05CH11231; AC02-98CH10886
- OSTI ID:
- 1396704
- Journal Information:
- Journal of Crystal Growth, Journal Name: Journal of Crystal Growth Vol. 452 Journal Issue: C; ISSN 0022-0248
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- Netherlands
- Language:
- English
Cited by: 5 works
Citation information provided by
Web of Science
Web of Science
Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
|
journal | October 2004 |
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