Preventing Thin Film Dewetting via Graphene Capping
- Department of Physics University of California Berkeley Berkeley CA 94720 USA
- Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA, Department of Materials Science and Engineering University of California Berkeley Berkeley CA 94720 USA
- The Molecular Foundry Lawrence Berkeley National Laboratory One Cyclotron Road Berkeley CA 94720 USA
- Department of Physics University of California Berkeley Berkeley CA 94720 USA, Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA, Kavli Energy NanoSciences Institute University of California Berkeley and the Lawrence Berkeley National Laboratory Berkeley CA 94720 USA
- Department of Chemistry University of California Berkeley CA 94720 USA
- Department of Materials Science and Engineering University of California Berkeley Berkeley CA 94720 USA, Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley CA 94720 USA, Department of Chemistry University of California Berkeley CA 94720 USA
A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single‐layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH‐TAC), gold, and also MoS 2 on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS 2 substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer‐capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties.
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- DE‐AC02‐05‐CH11231
- OSTI ID:
- 1393690
- Journal Information:
- Advanced Materials, Journal Name: Advanced Materials Vol. 29 Journal Issue: 36; ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
Web of Science
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