Twin-Free GaAs Nanosheets by Selective Area Growth: Implications for Defect-Free Nanostructures

Journal Article · Thu May 16 00:00:00 EDT 2013 · Nano Letters

DOI:https://doi.org/10.1021/nl400561j· OSTI ID:1383800

Chi, Chun-Yung ^[1]; Chang, Chia-Chi ^[1]; Hu, Shu ^[1]; Yeh, Ting-Wei ^[1]; Cronin, Stephen B. ^[1]; Dapkus, P. Daniel ^[1]

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1. Ming Hsieh Department of Electrical Engineering, ‡Department of Physics &, Astronomy, §Mork Family Department of Chemical Engineering and Material Science, and ∥Center for Energy Nanoscience, University of Southern California, Los Angeles, California, 90089, United States; Division of Chemistry and Chemical Engineering and #Joint Center for Artificial Photosynthesis (JCAP), California Institute of Technology, Pasadena, California, United States

• Research Organization: Energy Frontier Research Centers (EFRC) (United States). Center for Energy Nanoscience (CEN)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: SC0001013
• OSTI ID: 1383800
• Journal Information: Nano Letters, Vol. 13, Issue 6; Related Information: CEN partners with University of Southern California (lead); University of Illinois, Urbana-Champaign; University of Michigan; University of Virginia; ISSN 1530-6984
• Publisher: American Chemical Society
• Country of Publication: United States
• Language: English

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