Effect of Al ₂ O ₃ Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

Journal Article · Thu Mar 07 00:00:00 EST 2013 · Journal of Physical Chemistry. C

DOI:https://doi.org/10.1021/jp311846r· OSTI ID:1382926

Roelofs, Katherine E. ^[1]; Brennan, Thomas P. ^[2]; Dominguez, Juan C. ^[2]; Bailie, Colin D. ^[1]; Margulis, George Y. ^[3]; Hoke, Eric T. ^[3]; McGehee, Michael D. ^[1]; Bent, Stacey F. ^[2]

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1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
2. Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States
3. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States; Department of Applied Physics, Stanford University, Stanford, California 94305, United States

• Research Organization: Energy Frontier Research Centers (EFRC) (United States). Center on Nanostructuring for Efficient Energy Conversion (CNEEC)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES)
• DOE Contract Number: SC0001060
• OSTI ID: 1382926
• Journal Information: Journal of Physical Chemistry. C, Vol. 117, Issue 11; Related Information: CNEEC partners with Stanford University (lead); Carnegie Institution at Stanford; Technical University of Denmark; ISSN 1932-7447
• Publisher: American Chemical Society
• Country of Publication: United States
• Language: English

Related Subjects

catalysis (heterogeneous)
solar (fuels)
photosynthesis (natural and artificial)
bio-inspired
electrodes - solar
defects
charge transport
materials and chemistry by design
synthesis (novel materials)