Probing Phase Transformations and Microstructural Evolutions at the Small Scales: Synchrotron X-ray Microdiffraction for Advanced Applications in [Phase 3 Memory,] 3D IC (Integrated Circuits) and Solar PV (Photovoltaic) Devices

Radchenko, I.; Tippabhotla, S. K.; Tamura, N.; Budiman, A. S.

doi:10.1007/s11664-016-5012-5

Title: Probing Phase Transformations and Microstructural Evolutions at the Small Scales: Synchrotron X-ray Microdiffraction for Advanced Applications in [Phase 3 Memory,] 3D IC (Integrated Circuits) and Solar PV (Photovoltaic) Devices

Journal Article · Fri Oct 21 00:00:00 EDT 2016 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-016-5012-5· OSTI ID:1379596

Radchenko, I. ^[1]; Tippabhotla, S. K. ^[1]; Tamura, N. ^[2]; Budiman, A. S. ^[1]

Singapore Univ. of Technology and Design (SUTD) (Singapore)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Synchrotron x-ray microdiffraction (μXRD) allows characterization of a crystalline material in small, localized volumes. Phase composition, crystal orientation and strain can all be probed in few-second time scales. Crystalline changes over a large areas can be also probed in a reasonable amount of time with submicron spatial resolution. However, despite all the listed capabilities, μXRD is mostly used to study pure materials but its application in actual device characterization is rather limited. This article will explore the recent developments of the μXRD technique illustrated with its advanced applications in microelectronic devices and solar photovoltaic systems. Application of μXRD in microelectronics will be illustrated by studying stress and microstructure evolution in Cu TSV (through silicon via) during and after annealing. Here, the approach allowing study of the microstructural evolution in the solder joint of crystalline Si solar cells due to thermal cycling will be also demonstrated.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: AC02-05CH11231

OSTI ID:: 1379596

Journal Information:: Journal of Electronic Materials, Vol. 45, Issue 12; ISSN 0361-5235

Publisher:: Springer

Country of Publication:: United States

Language:: English

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